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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
DMTH4004SPS-13

DMTH4004SPS-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 40V 31A PWRDI5060

4445000
DMN6069SE-13

DMN6069SE-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 4.3A/10A SOT223

833
DMP510DL-7

DMP510DL-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 50V 180MA SOT23

0
BSS138-13-F

BSS138-13-F

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 50V SOT23 T&R 10K

0
DMP3068L-13

DMP3068L-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 30V 3.3A SOT23

0
DMN2400UFB4-7

DMN2400UFB4-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 750MA 3DFN

0
ZVN4525E6TA

ZVN4525E6TA

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 250V 230MA SOT-23-6

5517
DMTH6009LPSQ-13

DMTH6009LPSQ-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V PWRDI5060

0
DMN2020UFCL-7

DMN2020UFCL-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 9A X1-DFN1616-6

0
DMP21D0UFB-7

DMP21D0UFB-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 20V 770MA 3DFN

0
VN10LFTA

VN10LFTA

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 150MA SOT23-3

39725
DMP1009UFDFQ-7

DMP1009UFDFQ-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 12V 11A 6UDFN

12000
DMN1014UFDF-13

DMN1014UFDF-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 12V 8A 6UDFN

0
DMNH6021SPSQ-13

DMNH6021SPSQ-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 55A PWRDI5060-8

0
ZVP4525E6TA

ZVP4525E6TA

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 250V 197MA SOT23-6

2965
DMP3013SFV-7

DMP3013SFV-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 30V 12A PWRDI3333

103030
DMN2004TK-7

DMN2004TK-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 540MA SOT523

2147483647
DMP1022UFDEQ-7

DMP1022UFDEQ-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 12V 9.1A 6UDFN

0
ZXMN4A06GTA

ZXMN4A06GTA

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 40V 5A SOT223

122803
DMT68M8LFV-7

DMT68M8LFV-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 54.1A PWRDI3333

2000

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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