ample-chip ample-chip
RFQ
BOM

Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
ZVN4424GTA

ZVN4424GTA

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 240V 500MA SOT223

24373
DMP1009UFDF-13

DMP1009UFDF-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 12V 15A 6UDFN

0
DMNH6012SPSQ-13

DMNH6012SPSQ-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 50A PWRDI5060-8

2277
DMN3009SK3-13

DMN3009SK3-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CHANNEL 30V 80A TO252

0
DMG4812SSS-13

DMG4812SSS-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 8A 8SO

0
DMT3006LPS-13

DMT3006LPS-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 16A PWRDI5060

194012500
DMN7022LFG-13

DMN7022LFG-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 75V 7.8A PWRDI3333-8

0
DMN2022UFDF-7

DMN2022UFDF-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 7.9A 6UDFN

11949000
DMT6017LFDF-7

DMT6017LFDF-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 65V 8.1A 6UDFN

24000
DMN2600UFB-7

DMN2600UFB-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 25V 1.3A 3DFN

66936000
DMG10N60SCT

DMG10N60SCT

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 600V 12A TO220AB

0
BSS123W-7-F

BSS123W-7-F

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 100V 170MA SOT323

311787
DMN2053U-13

DMN2053U-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 6.5A SOT23 T&R 1

0
DMP2240UW-7

DMP2240UW-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 20V 1.5A SOT323

36780
DMTH10H009LPS-13

DMTH10H009LPS-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 100V PWRDI5060

0
ZXMN10A25KTC

ZXMN10A25KTC

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 100V 4.2A TO252-3

226
DMP213DUFA-7B

DMP213DUFA-7B

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 25V 145MA 3DFN

0
DMT6016LSS-13

DMT6016LSS-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 9.2A 8SO

0
DMN53D0LQ-13

DMN53D0LQ-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 50V 500MA SOT23

120000
DMP2305UVT-7

DMP2305UVT-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 20V 4.2A SOT23-3

27

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

RFQ BOM Call Skype Email
Top