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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
DMN67D8L-7

DMN67D8L-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 210MA SOT23

24356
DMNH4005SCTQ

DMNH4005SCTQ

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 40V 150A TO220AB

0
ZVNL110A

ZVNL110A

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 100V 320MA TO92-3

13637
DMTH43M8LFGQ-13

DMTH43M8LFGQ-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 40V PWRDI3333

0
DMT36M1LPS-13

DMT36M1LPS-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 65A PWRDI5060-8

2825
DMT10H010LCT

DMT10H010LCT

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 100V 98A TO220AB

43
DMN10H099SFG-13

DMN10H099SFG-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 100V 4.2A PWRDI3333

0
DMN63D8L-7

DMN63D8L-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 350MA SOT23

2147483647
DMN3008SFGQ-7

DMN3008SFGQ-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V PWRDI3333

0
DMT6009LSS-13

DMT6009LSS-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 10.8A 8SO T&R 2

18207
DMPH6023SK3-13

DMPH6023SK3-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CHANNEL 60V 35A TO252

5000
DMG7N65SJ3

DMG7N65SJ3

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 650V 5.5A TO251

0
ZVP3310FTA

ZVP3310FTA

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 100V 75MA SOT23-3

6828
DMN3024SFG-7

DMN3024SFG-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 7.5A PWRDI3333-8

1521
DMP2066LVT-7

DMP2066LVT-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 20V 4.5A SOT26

224
DMT3006LFDF-13

DMT3006LFDF-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 14.1A 6UDFN

0
DMTH4004SCTB-13

DMTH4004SCTB-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 40V 100A TO263AB T&R

3654000
DMP2165UW-7

DMP2165UW-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 20V 2.5A SOT323 T&R

0
NMSD200B01-7

NMSD200B01-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 200MA SOT363

3575
DMN1032UCB4-7

DMN1032UCB4-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 12V 4.8A U-WLB1010-4

2147483647

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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