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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
DMP1055USW-7

DMP1055USW-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 12V 3.8A SOT363

0
DMN3404L-7

DMN3404L-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 5.8A SOT23-3

0
DMP3015LSS-13

DMP3015LSS-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 30V 13A 8SOP

2147483647
ZXMN20B28KTC

ZXMN20B28KTC

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 200V 1.5A TO252-3

787
DMN62D1LFD-13

DMN62D1LFD-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 400MA 3DFN

0
ZXMP10A17GQTA

ZXMP10A17GQTA

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 100V 2.4A SOT223

16000
DMG8880LK3-13

DMG8880LK3-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 11A TO252

2179
ZXMP2120FFTA

ZXMP2120FFTA

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 200V 137MA SOT23F

47
DMTH3004LK3Q-13

DMTH3004LK3Q-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 21A/75A TO252-4L

42500
DMN6075S-7

DMN6075S-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 2A SOT23

0
DMT6030LFDF-13

DMT6030LFDF-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 6.8A 6UDFN

0
ZXMP6A13GTA

ZXMP6A13GTA

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 60V 1.7A SOT223

21086
DMP56D0UFB-7B

DMP56D0UFB-7B

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 50V 200MA 3DFN

2147483647
DMN31D5L-13

DMN31D5L-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 500MA SOT23 T&R

0
DMN10H220LVT-7

DMN10H220LVT-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 100V 1.87A TSOT26

373
DMP6023LE-13

DMP6023LE-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 60V 7A/18.2A SOT223

14100
DMTH6016LK3-13

DMTH6016LK3-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 10.8 TO252 T&R

0
DMS2120LFWB-7

DMS2120LFWB-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 20V 2.9A 8DFN

293430000
DMN2028UVT-7

DMN2028UVT-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 6.2A TSOT-26

387243000
DMN60H4D5SK3-13

DMN60H4D5SK3-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 600V 2.5A TO252

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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