ample-chip ample-chip
RFQ
BOM

Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
DMTH10H4M5LPS-13

DMTH10H4M5LPS-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 100V PWRDI5060

5000
DMTH8012LPS-13

DMTH8012LPS-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 80V 10A PWRDI5060

12
DMT6015LFV-7

DMT6015LFV-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V PWRDI3333

220000
DMPH4013SK3Q-13

DMPH4013SK3Q-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 40V 55A TO252 T&R

0
DMG1013UWQ-13

DMG1013UWQ-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 20V 820MA SOT323

0
DMT3006LFG-13

DMT3006LFG-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V PWRDI3333

0
ZXMN2A01FTA

ZXMN2A01FTA

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 1.9A SOT23-3

420156
DMN25D0UFA-7B

DMN25D0UFA-7B

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 25V 240MA 3DFN

2147483647
ZXMN0545G4TA

ZXMN0545G4TA

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 450V 140MA SOT-223

189031000
DMN6040SVT-7

DMN6040SVT-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N CH 60V 5A TSOT26

2147483647
DMG3406L-7

DMG3406L-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 3.6A SOT23

29404
DMP32D4SFB-7B

DMP32D4SFB-7B

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 30V 400MA 3DFN

3905
DMG4468LFG-7

DMG4468LFG-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 7.62A 8DFN

18000
DMP2033UVT-7

DMP2033UVT-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 20V 4.2A TSOT-26

2625
ZXM61N03FTA

ZXM61N03FTA

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 1.4A SOT23-3

190619
DMN5L06TK-7

DMN5L06TK-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 50V 280MA SOT-523

22162
DMN1004UFV-7

DMN1004UFV-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 12V 70A POWERDI3333

106094000
DMT68M8LFV-13

DMT68M8LFV-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 54.1A PWRDI3333

0
DMN24H3D5L-13

DMN24H3D5L-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 240V 480MA SOT23

0
ZXM64P03XTA

ZXM64P03XTA

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 30V 3.8A 8MSOP

2760

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

RFQ BOM Call Skype Email
Top