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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
DMN61D9UWQ-7

DMN61D9UWQ-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 400MA SOT323

3000
DMN2300UFD-7

DMN2300UFD-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 1.21A 3DFN

0
DMN2009LSS-13

DMN2009LSS-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 12A 8SOP

0
DMT2004UFV-13

DMT2004UFV-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 24V 70A POWERDI3333

27000
DMP2023UFDF-7

DMP2023UFDF-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 20V 7.6A 6UDFN

0
DMT2004UFDF-13

DMT2004UFDF-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 24V 14.1A 6UDFN

0
ZVN2106GTA

ZVN2106GTA

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 710MA SOT223

10539
DMP4015SSSQ-13

DMP4015SSSQ-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 40V 9.1A 8SO

3977
DMN2112SN-7

DMN2112SN-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 1.2A SC59-3

6158
ZVP2110GTA

ZVP2110GTA

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 100V 310MA SOT223

5550
ZXMN10A11KTC

ZXMN10A11KTC

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 100V 2.4A TO252-2

0
ZVP2106ASTZ

ZVP2106ASTZ

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 60V 280MA E-LINE

699612000
DMTH10H015LPS-13

DMTH10H015LPS-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 100V PWRDI5060

5000
DMP2035UFCL-7

DMP2035UFCL-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 20V 6.6A 6UDFN

2212
DMN1019UVT-13

DMN1019UVT-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 12V 10.7A TSOT26

0
DMP3008SFG-13

DMP3008SFG-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 30V 8.6A PWRDI3333-8

0
DMG3N60SJ3

DMG3N60SJ3

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 650V 2.8A TO251

0
DMN6040SK3-13

DMN6040SK3-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N CH 60V 20A TO252

0
DMP10H400SEQ-13

DMP10H400SEQ-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 100V 2.3A/6A SOT223

5683
DMN6017SK3-13

DMN6017SK3-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CHANNEL 60V 43A TO252

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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