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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
DMN2100UDM-7

DMN2100UDM-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 3.3A SOT-26

3812
ZVNL120A

ZVNL120A

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 200V 180MA TO92-3

615512000
DMG2302U-7

DMG2302U-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 4.2A SOT23-3

57762
DMP4025LSSQ-13

DMP4025LSSQ-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 40V 6A 8SO

50000
2N7002A-7

2N7002A-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 180MA SOT23

69007
DMN2990UFA-7B

DMN2990UFA-7B

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 510MA 3DFN

2147483647
2N7002W-7-F

2N7002W-7-F

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 115MA SOT323

770011
DMP4015SK3Q-13

DMP4015SK3Q-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 40V 14A/35A TO252

0
DMN62D0LFB-7

DMN62D0LFB-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 100MA 3DFN

1243243000
ZVP4525ZTA

ZVP4525ZTA

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 250V 205MA SOT89-3

360475000
DMN6013LFGQ-13

DMN6013LFGQ-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 10.3A PWRDI3333

27000
DMG3407SSN-7

DMG3407SSN-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 30V 4A SC59

0
DMT6012LFV-7

DMT6012LFV-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 43.3A PWRDI3333

62000
DMP2130L-7

DMP2130L-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 20V 3A SOT23-3

3370
DMTH69M8LFVW-7

DMTH69M8LFVW-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 15.9/45.4A PWRDI

0
ZXMP10A17GQTC

ZXMP10A17GQTC

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 100V 1.7A SOT223

12000
DMT5015LFDF-13

DMT5015LFDF-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 50V 9.1A 6UDFN

0
DMT8008LPS-13

DMT8008LPS-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 80V 83A PWRDI5060-8

0
DMN2005UFGQ-7

DMN2005UFGQ-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 18A PWRDI3333

4000
DMN55D0UT-7

DMN55D0UT-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 50V 160MA SOT-523

490

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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