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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
DMT8012LPS-13

DMT8012LPS-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 80V 9A/65A PWRDI5060

0
DMN66D0LT-7

DMN66D0LT-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 115MA SOT-523

1877156000
DMN6013LFG-13

DMN6013LFG-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 10.3A PWRDI3333

0
DMN601TK-7

DMN601TK-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 300MA SOT-523

0
DMP4025LSS-13

DMP4025LSS-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 40V 6A 8SO

2147483647
DMN3009SFG-7

DMN3009SFG-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 16A PWRDI3333

934
DMN2004K-7

DMN2004K-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 630MA SOT23-3

85547
DMP3010LK3-13

DMP3010LK3-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 30V 17A TO252-3

2604
DMN1014UFDF-7

DMN1014UFDF-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 12V 8A 6UDFN

0
ZXMN7A11KTC

ZXMN7A11KTC

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 70V 4.2A TO252-3

4681
ZXMN6A11GTA

ZXMN6A11GTA

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 3.1A SOT223

7101
DMN2230UQ-7

DMN2230UQ-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 2A SOT23

15907
DMN53D0LW-7

DMN53D0LW-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 50V 360MA SOT323

5239
ZVN4424ASTZ

ZVN4424ASTZ

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 240V 260MA E-LINE

74000
DMP2033UVT-13

DMP2033UVT-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 20V 4.2A TSOT-26

0
DMN6068LK3-13

DMN6068LK3-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 6A TO252-3

26308
BSS138K-13

BSS138K-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 50V 310MA SOT23

2147483647
DMT3008LFDF-7

DMT3008LFDF-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 12A 6UDFN

0
DMN4035L-13

DMN4035L-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 40V 4.6A SOT23

0
DMT10H025SK3-13

DMT10H025SK3-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 100V 41.2A TO252 T&R

5000

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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