Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
TK13A50DA(STA4,Q,M Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 500V 12.5A TO220SIS	0
TK3R1P04PL,RQ Toshiba Electronic Devices and Storage Corporation	MOSFET N-CHANNEL 40V 58A DPAK	2479
TK11A50D(STA4,Q,M) Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 500V 11A TO220SIS	0
SSM3K15ACT(TPL3) Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 30V 100MA CST3	2458
TPW4R50ANH,L1Q Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 100V 92A 8DSOP	27892
TPN1600ANH,L1Q Toshiba Electronic Devices and Storage Corporation	MOSFET N CH 100V 17A 8TSON-ADV	0
TK11A55D(STA4,Q,M) Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 550V 11A TO220SIS	0
SSM3H137TU,LF Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 34V 2A UFM	5472
TK72E08N1,S1X Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 80V 72A TO220	24
TK290P65Y,RQ Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 650V 11.5A DPAK	3662
SSM3J328R,LF Toshiba Electronic Devices and Storage Corporation	MOSFET P-CH 20V 6A SOT23F	498191
TPN2R304PL,L1Q Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 40V 80A 8TSON	15000
TK10A55D(STA4,Q,M) Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 550V 10A TO220SIS	0
TK80S04K3L(T6L1,NQ Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 40V 80A DPAK	0
TK7A45DA(STA4,Q,M) Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 450V 6.5A TO220SIS	0
SSM3K36MFV,L3F Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 20V 500MA VESM	15748
SSM3J306T(TE85L,F) Toshiba Electronic Devices and Storage Corporation	MOSFET P-CH 30V 2.4A TSM	879
TPH9R506PL,LQ Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 60V 34A 8SOP	8888
TK8A60W,S4VX Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 600V 8A TO220SIS	0
TPH14006NH,L1Q Toshiba Electronic Devices and Storage Corporation	MOSFET N CH 60V 14A 8-SOP ADV	1894

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS