Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
STL140N6F7 STMicroelectronics	MOSFET N-CH 60V 145A POWERFLAT	0
STB70NF3LLT4 STMicroelectronics	MOSFET N-CH 30V 70A D2PAK	0
STL12P6F6 STMicroelectronics	MOSFET P-CH 60V 4A POWERFLAT	2530
STP6N62K3 STMicroelectronics	MOSFET N-CH 620V 5.5A TO220AB	88
STFW38N65M5 STMicroelectronics	MOSFET N-CH 650V 30A ISOWATT	0
STB24N60M6 STMicroelectronics	MOSFET N-CH 600V D2PAK	1000
STW70N60DM6 STMicroelectronics	MOSFET N-CH 600V 62A TO247	0
STW56NM60N STMicroelectronics	MOSFET N-CH 600V 45A TO247	0
STD46P4LLF6 STMicroelectronics	MOSFET P-CH 40V 46A DPAK	1251
STH320N4F6-2 STMicroelectronics	MOSFET N-CH 40V 200A H2PAK	0
STP45N65M5 STMicroelectronics	MOSFET N-CH 650V 35A TO220	2059
STB76NF75 STMicroelectronics	MOSFET N-CH 75V 80A D2PAK	1113
STB10NK60ZT4 STMicroelectronics	MOSFET N-CH 600V 10A D2PAK	2643
STW14NK50Z STMicroelectronics	MOSFET N-CH 500V 14A TO247-3	411
STB28NM50N STMicroelectronics	MOSFET N-CH 500V 21A D2PAK	0
STD60NF55LT4 STMicroelectronics	MOSFET N-CH 55V 60A DPAK	2900
STP20NK50Z STMicroelectronics	MOSFET N-CH 500V 17A TO220AB	1910
STD7N60DM2 STMicroelectronics	MOSFET N-CH 600V 6A DPAK	0
STD28P3LLH6AG STMicroelectronics	MOSFET P-CH 30V 12A DPAK	0
STD95N04 STMicroelectronics	MOSFET N-CH 40V 80A DPAK	604

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS