Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
STW9N150 STMicroelectronics	MOSFET N-CH 1500V 8A TO247-3	603
STP28NM50N STMicroelectronics	MOSFET N-CH 500V 21A TO220AB	436
STFI13N65M2 STMicroelectronics	MOSFET N-CH 650V 10A I2PAKFP	0
STH290N4F6-2AG STMicroelectronics	MOSFET N-CH 40V 180A H2PAK-2	0
STB9NK60ZT4 STMicroelectronics	MOSFET N-CH 600V 7A D2PAK	964
SCT20N120 STMicroelectronics	SICFET N-CH 1200V 20A HIP247	451
STB35N65DM2 STMicroelectronics	MOSFET N-CH 650V 28A D2PAK	2053
STP6N65M2 STMicroelectronics	MOSFET N-CH 650V 4A TO220	0
STB6NK60Z-1 STMicroelectronics	MOSFET N-CH 600V 6A I2PAK	0
STH240N10F7-2 STMicroelectronics	MOSFET N-CH 100V 180A H2PAK-2	861
STW8N90K5 STMicroelectronics	MOSFET N-CH 900V 8A TO247-3	6
STQ2LN60K3-AP STMicroelectronics	MOSFET N-CH 600V 600MA TO92-3	5541
STD17NF03L-1 STMicroelectronics	MOSFET N-CH 30V 17A IPAK	3656
STD2N95K5 STMicroelectronics	MOSFET N-CH 950V 2A DPAK	384
STP60NF06L STMicroelectronics	MOSFET N-CH 60V 60A TO220AB	0
STW45NM60 STMicroelectronics	MOSFET N-CH 650V 45A TO247-3	88
STW45NM50 STMicroelectronics	MOSFET N-CH 500V 45A TO247-3	561
STY112N65M5 STMicroelectronics	MOSFET N-CH 650V 96A MAX247	281
STB3N62K3 STMicroelectronics	MOSFET N-CH 620V 2.7A D2PAK	0
STP15NK50Z STMicroelectronics	MOSFET N-CH 500V 14A TO220AB	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS