Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
STB5N80K5 STMicroelectronics	MOSFET N-CH 800V 4A D2PAK	995
STS6P3LLH6 STMicroelectronics	MOSFET P-CH 30V 6A 8SO	0
STW13N95K3 STMicroelectronics	MOSFET N-CH 950V 10A TO247-3	0
STF18NM60ND STMicroelectronics	MOSFET N-CH 600V 13A TO220FP	0
STD105N10F7AG STMicroelectronics	MOSFET N-CH 100V 80A DPAK	2488
STP200N3LL STMicroelectronics	MOSFET N-CH 30V 120A TO220	1867
STP13NK60ZFP STMicroelectronics	MOSFET N-CH 600V 13A TO220FP	0
STF18N60M2 STMicroelectronics	MOSFET N-CH 600V 13A TO220FP	306
STW63N65DM2 STMicroelectronics	MOSFET N-CH 650V 65A TO247	0
STD60NF55LAT4 STMicroelectronics	MOSFET N-CH 55V 60A DPAK	0
STF12N65M2 STMicroelectronics	MOSFET N-CH 650V 8A TO220FP	294
STP46N60M6 STMicroelectronics	MOSFET N-CH 600V 36A TO220	65
STP9NK80Z STMicroelectronics	MOSFET N-CH 800V 7.5A TO220AB	0
STB11NM80T4 STMicroelectronics	MOSFET N-CH 800V 11A D2PAK	3987
STP12NM50FP STMicroelectronics	MOSFET N-CH 500V 12A TO220FP	479
STD90N03L STMicroelectronics	MOSFET N-CH 30V 80A DPAK	0
STP110N10F7 STMicroelectronics	MOSFET N CH 100V 110A TO-220	968
STU2N95K5 STMicroelectronics	MOSFET N-CH 950V 2A IPAK	0
STI13NM60N STMicroelectronics	MOSFET N-CH 600V 11A I2PAK	996
STB55NF03LT4 STMicroelectronics	MOSFET N-CH 30V 55A D2PAK	1978

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS