Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
STP33N60DM6 STMicroelectronics	MOSFET N-CH 600V 25A TO220	975
STD2NC45-1 STMicroelectronics	MOSFET N-CH 450V 1.5A IPAK	1110
SCTW90N65G2V STMicroelectronics	SICFET N-CH 650V 90A HIP247	551
STW8NK80Z STMicroelectronics	MOSFET N-CH 800V 6.2A TO247-3	0
STI33N65M2 STMicroelectronics	MOSFET N-CH 650V 24A I2PAK	2000
SCTW40N120G2VAG STMicroelectronics	SICFET N-CH 1200V 33A HIP247	0
STB30NF10T4 STMicroelectronics	MOSFET N-CH 100V 35A D2PAK	0
STW48N60M2 STMicroelectronics	MOSFET N-CH 600V 42A TO247	555
STB20NM60D STMicroelectronics	MOSFET N-CH 600V 20A D2PAK	1000
STW58N60DM2AG STMicroelectronics	MOSFET N-CH 600V 50A TO247	107
STF15NM65N STMicroelectronics	MOSFET N-CH 650V 12A TO220FP	962
STH180N10F3-6 STMicroelectronics	MOSFET N-CH 100V 180A H2PAK-6	0
STF19NF20 STMicroelectronics	MOSFET N-CH 200V 15A TO220FP	75
STI26NM60N STMicroelectronics	MOSFET N-CH 600V 20A I2PAK	0
STP9NK65ZFP STMicroelectronics	MOSFET N-CH 650V 6.4A TO220FP	0
STD7NM64N STMicroelectronics	MOSFET N-CH 640V 5A DPAK	0
STB46NF30 STMicroelectronics	MOSFET N-CH 300V 42A D2PAK	1447
STD2HNK60Z STMicroelectronics	MOSFET N-CH 600V 2A DPAK	11480
STH260N6F6-2 STMicroelectronics	MOSFET N-CH 60V 180A H2PAK-2	645
STP12NM50 STMicroelectronics	MOSFET N-CH 500V 12A TO220AB	1416

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS