Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Image	Part Number	Description / PDF	Quantity	Rfq
	RM47N600T7 Rectron USA	MOSFET N-CHANNEL 600V 47A TO247	0
	RM12P30S8 Rectron USA	MOSFET P-CHANNEL 30V 12A 8SOP	0
	RM30P55LD Rectron USA	MOSFET P-CHANNEL 55V 30A TO252-2	0
	RM4P30S6 Rectron USA	MOSFET P-CH 30V 4.2A SOT23-6	0
	RM80N30LD Rectron USA	MOSFET N-CHANNEL 30V 80A TO252-2	0
	RM35N30DN Rectron USA	MOSFET N-CHANNEL 30V 35A 8DFN	0
	RM170N30DF Rectron USA	MOSFET N-CHANNEL 30V 170A 8DFN	0
	RM3415 Rectron USA	MOSFET P-CHANNEL 20V 4A SOT23	0
	RM15N650T2 Rectron USA	MOSFET N-CH 650V 15A TO220-3	0
	RM40N40D3 Rectron USA	MOSFET N-CHANNEL 40V 40A 8DFN	0
	RM12N650LD Rectron USA	MOSFET N-CH 650V 11.5A TO252-2	0
	RM3N700S4 Rectron USA	MOSFET N-CHANNEL 700V 3A SOT223	0
	RM12N650IP Rectron USA	MOSFET N-CH 650V 11.5A TO251	0
	RM6N800LD Rectron USA	MOSFET N-CHANNEL 800V 6A TO252-2	0
	RM5N800TI Rectron USA	MOSFET N-CHANNEL 800V 5A TO220F	0
	RM24N200TI Rectron USA	MOSFET N-CHANNEL 220V 24A TO220F	0
	RM130N200HD Rectron USA	MOSFET N-CH 200V 132A TO263-2	0
	RM6005S4 Rectron USA	MOSFET N-CHANNEL 60V 5A SOT223-3	0
	RM1A5N30S3AE Rectron USA	MOSFET N-CH 30V 1.5A/1.4A SOT323	0
	RM21N700T2 Rectron USA	MOSFET N-CH 700V 21A TO220-3	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS