Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
RM50N30DN Rectron USA	MOSFET N-CHANNEL 30V 50A 8DFN	0
RM30N100T2 Rectron USA	MOSFET N-CH 100V 30A TO220-3	0
RM3407 Rectron USA	MOSFET P-CHANNEL 30V 4.3A SOT23	12000
RM8N700T2 Rectron USA	MOSFET N-CHANNEL 700V 8A TO220-3	0
RM90N40DF Rectron USA	MOSFET N-CHANNEL 40V 90A 8DFN	0
RM47N650T7 Rectron USA	MOSFET N-CHANNEL 650V 47A TO247	1000000
RM150N30LT2 Rectron USA	MOSFET N-CH 30V 150A TO220-3	0
RM6N800IP Rectron USA	MOSFET N-CHANNEL 800V 6A TO251	0
RM6005AR Rectron USA	MOSFET N-CHANNEL 60V 5A SOT223-3	0
RM6A5N30S6 Rectron USA	MOSFET N-CH 32V 6.5A SOT23-6	0
RM50P30DF Rectron USA	MOSFET P-CHANNEL 30V 50A 8DFN	0
RM8A5P60S8 Rectron USA	MOSFET P-CHANNEL 60V 8.5A 8SOP	0
RM75N60LD Rectron USA	MOSFET N-CHANNEL 60V 75A TO252-2	0
RM80N150T2 Rectron USA	MOSFET N-CH 150V 80A TO220-3	0
RM150N60T2 Rectron USA	MOSFET N-CH 60V 150A TO220-3	0
RM2333 Rectron USA	MOSFET P-CHANNEL 12V 6A SOT23	0
RM12N650T2 Rectron USA	MOSFET N-CH 650V 11.5A TO220-3	0
RM2308 Rectron USA	MOSFET N-CHANNEL 60V 3A SOT23	0
RM21N650T7 Rectron USA	MOSFET N-CHANNEL 650V 21A TO247	0
RM150N100T2 Rectron USA	MOSFET N-CH 100V 150A TO220-3	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS