Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Arrays

Part Number	Description / PDF	Quantity
FDC6420C Sanyo Semiconductor/ON Semiconductor	MOSFET N/P-CH 20V 3A/2.2A SSOT-6	1323
NTZD3154NT1G Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 20V 540MA SOT563	5124
NTUD3169CZT5G Sanyo Semiconductor/ON Semiconductor	MOSFET N/P-CH 20V SOT963	20362
NVMD4N03R2G Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 30V 4A SO8FL	0
FDMS7700S Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 30V 12A/22A POWER56	30000
FDS8949 Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 40V 6A 8SOIC	0
NTMFD5C674NLT1G Sanyo Semiconductor/ON Semiconductor	T6 60V LL S08FL DS	22500
FDMS3622S Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 25V 17.5/34A PWR56	3177
FDS6898A Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 20V 9.4A 8SOIC	625
FDS6930B Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 30V 5.5A 8SOIC	2463
NTHD4508NT1G Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 20V 3A CHIPFET	5837
FDY4000CZ Sanyo Semiconductor/ON Semiconductor	MOSFET N/P-CH 20V SOT563F	23796
FDME1034CZT Sanyo Semiconductor/ON Semiconductor	MOSFET N/P-CH 20V 6-MICROFET	0
FDMS3606S Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 30V 13A/27A POWER56	0
NVMFD5853NT1G Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 40V 12A 8DFN	2148
FDMA1029PZ Sanyo Semiconductor/ON Semiconductor	MOSFET 2P-CH 20V 3.1A MICROFET	15622
FQS4901TF Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 400V 450MA 8SOIC	3658
FDMC8032L Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 40V 7A 8-MLP	853
NVMD6N04R2G Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 40V 4.6A 8-SOIC	300
FDMD85100 Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 100V	0

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
JFET Array	Low noise, high input impedance	Analog switches, RF amplifiers
MOSFET Array (Enhancement)	High switching speed, low on-resistance	Power supplies, motor drivers
MOSFET Array (Depletion)	Normally-on behavior, high durability	Level shifters, analog circuits
HEMT Array	High electron mobility, microwave performance	Satellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

Parameter	Description	Importance
R_DS(on)	On-state resistance	Impacts conduction loss and efficiency
V_DS(max)	Max drain-source voltage	Determines voltage rating
I_D(max)	Max continuous drain current	Defines current handling capability
Q_g	Gate charge	Affects switching speed and driver requirements
Thermal Resistance	Junction-to-ambient resistance	Crucial for thermal management

5. Application Fields

Consumer Electronics: Smartphone power management, audio amplifiers
Automotive: EV battery management systems, 48V DC-DC converters
Industrial: PLCs, motor drives, welding equipment
Telecommunications: Base station RF amplifiers, optical network transceivers
Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

Manufacturer	Representative Products	Key Features
Infineon Technologies	BTS724GX	Smart power MOSFET array with diagnostic functions
STMicroelectronics	IPD90N03S4-01	High-side switch with 90A rating
ON Semiconductor	NVN4080	Automotive-qualified 80V intelligent power array
Nexperia	PMBT2369	High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low R_DS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies