Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Arrays

Part Number	Description / PDF	Quantity
FDMS3660AS Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 30V 13A/30A 8QFN	0
NTMFD6H852NLT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 80V 8DFN	4500
FDS9945 Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 60V 3.5A 8SOIC	13426
NTZD3155CT2G Sanyo Semiconductor/ON Semiconductor	MOSFET N/P-CH 20V SOT-563	11
NTHC5513T1G Sanyo Semiconductor/ON Semiconductor	MOSFET N/P-CH 20V CHIPFET	7219
FDG6335N Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 20V 0.7A SOT-363	3032
NVMFD5C478NWFT1G Sanyo Semiconductor/ON Semiconductor	40V 17 MOHM T8 S08FL DUAL	0
NTLUD3A260PZTAG Sanyo Semiconductor/ON Semiconductor	MOSFET 2P-CH 20V 1.3A 6UDFN	5521
ECH8655R-TL-H Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 24V 9A 8ECH	3000
FDS6892A Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 20V 7.5A 8SOIC	0
NVMFD5C470NLWFT1G Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 40V 36A S08FL	4
FDMS3686S Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 30V 13A/23A POWER56	3000
NVMFD5873NLT1G Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 60V 10A SO8FL	2793
NTJD4152PT2G Sanyo Semiconductor/ON Semiconductor	MOSFET 2P-CH 20V 0.88A SC88-6	1634
FDG6320C Sanyo Semiconductor/ON Semiconductor	MOSFET N/P-CH 25V 220/140MA SC88	3846
NVMFD5853NLT1G Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 40V 12A 8DFN	43
FDMD8900 Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 30V 19A/17A 12POWER	9000
NTMD4N03R2G Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 30V 4A 8SOIC	22717
FDS6900AS Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC	0
NVMFD5877NLT1G Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 60V 6A 8SOIC	0

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
JFET Array	Low noise, high input impedance	Analog switches, RF amplifiers
MOSFET Array (Enhancement)	High switching speed, low on-resistance	Power supplies, motor drivers
MOSFET Array (Depletion)	Normally-on behavior, high durability	Level shifters, analog circuits
HEMT Array	High electron mobility, microwave performance	Satellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

Parameter	Description	Importance
R_DS(on)	On-state resistance	Impacts conduction loss and efficiency
V_DS(max)	Max drain-source voltage	Determines voltage rating
I_D(max)	Max continuous drain current	Defines current handling capability
Q_g	Gate charge	Affects switching speed and driver requirements
Thermal Resistance	Junction-to-ambient resistance	Crucial for thermal management

5. Application Fields

Consumer Electronics: Smartphone power management, audio amplifiers
Automotive: EV battery management systems, 48V DC-DC converters
Industrial: PLCs, motor drives, welding equipment
Telecommunications: Base station RF amplifiers, optical network transceivers
Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

Manufacturer	Representative Products	Key Features
Infineon Technologies	BTS724GX	Smart power MOSFET array with diagnostic functions
STMicroelectronics	IPD90N03S4-01	High-side switch with 90A rating
ON Semiconductor	NVN4080	Automotive-qualified 80V intelligent power array
Nexperia	PMBT2369	High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low R_DS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies