Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Arrays

Part Number	Description / PDF	Quantity
NVMFD5875NLT1G Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 60V 7A SO8FL	2990
FDG8850NZ Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 30V 750MA SC88	11043
NTHD3102CT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N/P-CH 20V 4A/3.1A 1206A	0
FDS6975 Sanyo Semiconductor/ON Semiconductor	MOSFET 2P-CH 30V 6A 8SOIC	3721
NVMFD5483NLWFT1G Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 60V 6.4A 8DFN	0
FDS6984AS Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 30V 5.5A/8.5A 8SOIC	0
FDMS3664S Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 30V 13A/25A POWER56	277
NVMFD5C466NLT1G Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 40V 52A S08FL	1580600000
NTLUD3A260PZTBG Sanyo Semiconductor/ON Semiconductor	MOSFET 2P-CH 20V 1.3A 6UDFN	288045000
FDMS3600AS Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 25V 15A/30A POWER56	6000
FDMD8680 Sanyo Semiconductor/ON Semiconductor	MOSFET 2 N-CH 80V 66A 8-PQFN	1626
NVMFD5C470NT1G Sanyo Semiconductor/ON Semiconductor	40V 11.7 MOHM T8 S08FL DU	0
FDPC8013S Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 30V 13A/26A 3.3MM	7000
NDS9945 Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 60V 3.5A 8-SOIC	2924
FDML7610S Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 30V 12A/17A 8MLP	2355
ECH8663R-TL-H Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 30V 8A 8ECH	37530000
FDS9926A Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 20V 6.5A 8SOIC	20042
FDS6910 Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 30V 7.5A 8SOIC	5143
NTMFD5C446NLT1G Sanyo Semiconductor/ON Semiconductor	T6 40V LL S08FL DS	3000
VEC2315-TL-W Sanyo Semiconductor/ON Semiconductor	MOSFET 2P-CH 60V 2.5A VEC8	177

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
JFET Array	Low noise, high input impedance	Analog switches, RF amplifiers
MOSFET Array (Enhancement)	High switching speed, low on-resistance	Power supplies, motor drivers
MOSFET Array (Depletion)	Normally-on behavior, high durability	Level shifters, analog circuits
HEMT Array	High electron mobility, microwave performance	Satellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

Parameter	Description	Importance
R_DS(on)	On-state resistance	Impacts conduction loss and efficiency
V_DS(max)	Max drain-source voltage	Determines voltage rating
I_D(max)	Max continuous drain current	Defines current handling capability
Q_g	Gate charge	Affects switching speed and driver requirements
Thermal Resistance	Junction-to-ambient resistance	Crucial for thermal management

5. Application Fields

Consumer Electronics: Smartphone power management, audio amplifiers
Automotive: EV battery management systems, 48V DC-DC converters
Industrial: PLCs, motor drives, welding equipment
Telecommunications: Base station RF amplifiers, optical network transceivers
Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

Manufacturer	Representative Products	Key Features
Infineon Technologies	BTS724GX	Smart power MOSFET array with diagnostic functions
STMicroelectronics	IPD90N03S4-01	High-side switch with 90A rating
ON Semiconductor	NVN4080	Automotive-qualified 80V intelligent power array
Nexperia	PMBT2369	High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low R_DS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies