Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
AO6808_101

AO6808_101

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 20V 4.6A 6TSOP

0

AO6602_DELTA

AO6602_DELTA

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 6TSOP

0

AON6936

AON6936

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 30V 22A/40A 8DFN

0

AOP605

AOP605

Alpha and Omega Semiconductor, Inc.

MOSFET N/P-CH 30V 8DIP

0

AO4914_101

AO4914_101

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 30V 8A

0

AO4850

AO4850

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 75V 2.3A 8SOIC

0

AO4801L

AO4801L

Alpha and Omega Semiconductor, Inc.

MOSFET 2P-CH 30V 5A 8SOIC

0

AON6922

AON6922

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 25V 18A/31A 8DFN

0

AON6971

AON6971

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 30V 23A/40A 8DFN

0

AO4952

AO4952

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 30V 11A 8-SOIC

0

AO4822L_101

AO4822L_101

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 30V 8A

0

AO4822AL_102

AO4822AL_102

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 30V 8A 8SOIC

0

AO4801

AO4801

Alpha and Omega Semiconductor, Inc.

MOSFET 2P-CH 8-SOIC

0

AON7934_101

AON7934_101

Alpha and Omega Semiconductor, Inc.

MOSFET

0

AO6801A

AO6801A

Alpha and Omega Semiconductor, Inc.

MOSFET 2P-CH 30V 2.3A 6TSOP

0

AO4914L

AO4914L

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 30V 8A

0

AO4801AL_001

AO4801AL_001

Alpha and Omega Semiconductor, Inc.

MOSFET 2P-CH 30V 5A 8SOIC

0

AO4840L_102

AO4840L_102

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH DUAL 40V 8SOIC

0

AON5810

AON5810

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 20V 7.7A 6DFN

0

AON2801L#A

AON2801L#A

Alpha and Omega Semiconductor, Inc.

MOSFET 2P-CH 20V 3A DFN2X2-6L

0

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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