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Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
AON6920_001

AON6920_001

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 30V 5X6DFN

0
AON4605

AON4605

Alpha and Omega Semiconductor, Inc.

MOSFET N/P-CH 30V 4.3A/3.4A 8DFN

0
AO8810#A

AO8810#A

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 20V 7A 8-TSSOP

0
AO9926BL_101

AO9926BL_101

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 8SOIC

0
AO6800L_003

AO6800L_003

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 30V 3.4A 6-TSOP

0
AO4854L_102

AO4854L_102

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 30V 8A 8SOIC

0
AON6928

AON6928

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 30V 17A/30A 8DFN

0
AOC2802

AOC2802

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 4WLCSP

0
AOC2800

AOC2800

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 4WLCSP

0
AON7812

AON7812

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 30V 6A

0
AO8801A

AO8801A

Alpha and Omega Semiconductor, Inc.

MOSFET 2P-CH 20V 4.5A 8TSSOP

0
AOP610

AOP610

Alpha and Omega Semiconductor, Inc.

MOSFET N/P-CH 30V 8DIP

0
AO4806L

AO4806L

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 20V 9.4A 8-SOIC

0
AO4812L_101

AO4812L_101

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 30V 6A

0
AOP607

AOP607

Alpha and Omega Semiconductor, Inc.

MOSFET N/P-CH 60V 8DIP

0
AOD606

AOD606

Alpha and Omega Semiconductor, Inc.

MOSFET N/P-CH 40V 8A TO252-4

0
AON6973A

AON6973A

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 30V 22A/30A 8DFN

0
AO5804E

AO5804E

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 20V 0.5A SC89-6L

0
AO4830L

AO4830L

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 80V 3.5A 8SOIC

0
AO4914

AO4914

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 30V 8A 8SOIC

0

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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