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Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
BSO303SPH

BSO303SPH

IR (Infineon Technologies)

7.2A, 30V, 0.021OHM, P-CHANNEL,

4499
IPG15N06S3L-45

IPG15N06S3L-45

IR (Infineon Technologies)

OPTLMOS N-CHANNEL POWER MOSFET

19782
IRF7317TRPBF

IRF7317TRPBF

IR (Infineon Technologies)

MOSFET N/P-CH 20V 8-SOIC

16333
IRFI4019H-117P

IRFI4019H-117P

IR (Infineon Technologies)

MOSFET 2N-CH 150V 8.7A TO220-5

0
IRLHS6276TRPBF

IRLHS6276TRPBF

IR (Infineon Technologies)

MOSFET 2N-CH 20V 4.5A PQFN

6336
IPG20N06S4L26AATMA1

IPG20N06S4L26AATMA1

IR (Infineon Technologies)

IPG20N06 - 55V-60V N-CHANNEL AUT

966
BSO207PHXUMA1

BSO207PHXUMA1

IR (Infineon Technologies)

PFET, 5A I(D), 20V, 0.045OHM, 2-

0
BSC0921NDIATMA1

BSC0921NDIATMA1

IR (Infineon Technologies)

MOSFET 2N-CH 30V 17A/31A TISON8

14157
BSZ076N06NS3G

BSZ076N06NS3G

IR (Infineon Technologies)

OPTLMOS N-CHANNEL POWER MOSFET

14809
IPG20N04S4L08AATMA1

IPG20N04S4L08AATMA1

IR (Infineon Technologies)

MOSFET 2N-CH 40V 20A 8TDSON

0
BSL308PEL6327HTSA1

BSL308PEL6327HTSA1

IR (Infineon Technologies)

SMALL SIGNAL P-CHANNEL MOSFET

48310
SP001017058

SP001017058

IR (Infineon Technologies)

IPP60R380P6 - 600V N-CHANNEL

0
IPP60R380E6

IPP60R380E6

IR (Infineon Technologies)

COOLMOS N-CHANNEL POWER MOSFET

477
IPA180N10N3G

IPA180N10N3G

IR (Infineon Technologies)

28A, 100V, 0.018OHM, N-CHANNEL,

400
IRF9358TRPBF

IRF9358TRPBF

IR (Infineon Technologies)

MOSFET 2P-CH 30V 9.2A 8SOIC

30516
SPD08N50C3

SPD08N50C3

IR (Infineon Technologies)

COOLMOS, 7.6A, 500V, 0.6OHM, N-C

3810
IPW80R290C3AFKSA1

IPW80R290C3AFKSA1

IR (Infineon Technologies)

PFET, 17A I(D), 800V, 0.29OHM, 1

0
BSL214NH6327XTSA1

BSL214NH6327XTSA1

IR (Infineon Technologies)

BSL214 - 250V-600V SMALL SIGNAL

3000
FF3MR12KM1HOSA1

FF3MR12KM1HOSA1

IR (Infineon Technologies)

MEDIUM POWER 62MM

28
IRF7503TRPBF

IRF7503TRPBF

IR (Infineon Technologies)

MOSFET 2N-CH 30V 2.4A MICRO8

8617

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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