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Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
ALD210800PCL

ALD210800PCL

Advanced Linear Devices, Inc.

MOSFET 4N-CH 10.6V 0.08A 16DIP

0
ALD1101SAL

ALD1101SAL

Advanced Linear Devices, Inc.

MOSFET 2N-CH 10.6V 8SOIC

47
ALD212902PAL

ALD212902PAL

Advanced Linear Devices, Inc.

MOSFET 2N-CH 10.6V 0.08A 8DIP

0
ALD212900PAL

ALD212900PAL

Advanced Linear Devices, Inc.

MOSFET 2N-CH 10.6V 0.08A 8DIP

18
ALD1108ESCL

ALD1108ESCL

Advanced Linear Devices, Inc.

MOSFET 4N-CH 10V 16SOIC

0
ALD114804SCL

ALD114804SCL

Advanced Linear Devices, Inc.

MOSFET 4N-CH 10.6V 16SOIC

0
ALD310700SCL

ALD310700SCL

Advanced Linear Devices, Inc.

MOSFET 4 P-CH 8V 16SOIC

0
ALD114835SCL

ALD114835SCL

Advanced Linear Devices, Inc.

MOSFET 4N-CH 10.6V 16SOIC

22
ALD114813SCL

ALD114813SCL

Advanced Linear Devices, Inc.

MOSFET 4N-CH 10.6V 16SOIC

0
ALD310700APCL

ALD310700APCL

Advanced Linear Devices, Inc.

MOSFET 4 P-CH 8V 16DIP

40
ALD110902PAL

ALD110902PAL

Advanced Linear Devices, Inc.

MOSFET 2N-CH 10.6V 8DIP

0
ALD114813PCL

ALD114813PCL

Advanced Linear Devices, Inc.

MOSFET 4N-CH 10.6V 16DIP

0
ALD110800APCL

ALD110800APCL

Advanced Linear Devices, Inc.

MOSFET 4N-CH 10.6V 16DIP

47
ALD210800SCL

ALD210800SCL

Advanced Linear Devices, Inc.

MOSFET 4N-CH 10.6V 0.08A 16SOIC

38
ALD114904SAL

ALD114904SAL

Advanced Linear Devices, Inc.

MOSFET 2N-CH 10.6V 8SOIC

15
ALD210800APCL

ALD210800APCL

Advanced Linear Devices, Inc.

MOSFET 4N-CH 10.6V 0.08A 16DIP

46
ALD310708ASCL

ALD310708ASCL

Advanced Linear Devices, Inc.

MOSFET 4 P-CH 8V 16SOIC

0
ALD1101ASAL

ALD1101ASAL

Advanced Linear Devices, Inc.

MOSFET 2N-CH 10.6V 8SOIC

44
ALD1116SAL

ALD1116SAL

Advanced Linear Devices, Inc.

MOSFET 2N-CH 10.6V 8SOIC

5720
ALD210804PCL

ALD210804PCL

Advanced Linear Devices, Inc.

MOSFET 4N-CH 10.6V 0.08A 16DIP

0

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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