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Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
ALD1110EPAL

ALD1110EPAL

Advanced Linear Devices, Inc.

MOSFET 2N-CH 10V 8DIP

0
ALD210804SCL

ALD210804SCL

Advanced Linear Devices, Inc.

MOSFET 4N-CH 10.6V 0.08A 16SOIC

0
ALD212908PAL

ALD212908PAL

Advanced Linear Devices, Inc.

MOSFET 2N-CH 10.6V 0.08A 8DIP

0
ALD1117PAL

ALD1117PAL

Advanced Linear Devices, Inc.

MOSFET 2P-CH 10.6V 8DIP

3
ALD114904PAL

ALD114904PAL

Advanced Linear Devices, Inc.

MOSFET 2N-CH 10.6V 8DIP

0
ALD1115PAL

ALD1115PAL

Advanced Linear Devices, Inc.

MOSFET N/P-CH 10.6V 8DIP

98
ALD110908APAL

ALD110908APAL

Advanced Linear Devices, Inc.

MOSFET 2N-CH 10.6V 8DIP

0
ALD110900ASAL

ALD110900ASAL

Advanced Linear Devices, Inc.

MOSFET 2N-CH 10.6V 8SOIC

22
ALD1102SAL

ALD1102SAL

Advanced Linear Devices, Inc.

MOSFET 2P-CH 10.6V 8SOIC

2
ALD310708SCL

ALD310708SCL

Advanced Linear Devices, Inc.

MOSFET 4 P-CH 8V 16SOIC

45
ALD310704SCL

ALD310704SCL

Advanced Linear Devices, Inc.

MOSFET 4 P-CH 8V 16SOIC

0
ALD110814PCL

ALD110814PCL

Advanced Linear Devices, Inc.

MOSFET 4N-CH 10.6V 16DIP

0
ALD1102BPAL

ALD1102BPAL

Advanced Linear Devices, Inc.

MOSFET 2P-CH 10.6V 8DIP

0
ALD110902SAL

ALD110902SAL

Advanced Linear Devices, Inc.

MOSFET 2N-CH 10.6V 8SOIC

16
ALD114935PAL

ALD114935PAL

Advanced Linear Devices, Inc.

MOSFET 2N-CH 10.6V 8DIP

0
ALD114804ASCL

ALD114804ASCL

Advanced Linear Devices, Inc.

MOSFET 4N-CH 10.6V 16SOIC

0
ALD111933PAL

ALD111933PAL

Advanced Linear Devices, Inc.

MOSFET 2N-CH 10.6V 8DIP

0
ALD310704ASCL

ALD310704ASCL

Advanced Linear Devices, Inc.

MOSFET 4 P-CH 8V 16SOIC

0
ALD210808SCL

ALD210808SCL

Advanced Linear Devices, Inc.

MOSFET 4N-CH 10.6V 0.08A 16SOIC

0
ALD1117SAL

ALD1117SAL

Advanced Linear Devices, Inc.

MOSFET 2P-CH 10.6V 8SOIC

0

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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