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Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
ALD110808PCL

ALD110808PCL

Advanced Linear Devices, Inc.

MOSFET 4N-CH 10.6V 16DIP

0
ALD110804PCL

ALD110804PCL

Advanced Linear Devices, Inc.

MOSFET 4N-CH 10.6V 16DIP

0
ALD110804SCL

ALD110804SCL

Advanced Linear Devices, Inc.

MOSFET 4N-CH 10.6V 16SOIC

0
ALD110908ASAL

ALD110908ASAL

Advanced Linear Devices, Inc.

MOSFET 2N-CH 10.6V 8SOIC

28
ALD110900APAL

ALD110900APAL

Advanced Linear Devices, Inc.

MOSFET 2N-CH 10.6V 8DIP

6
ALD110800PCL

ALD110800PCL

Advanced Linear Devices, Inc.

MOSFET 4N-CH 10.6V 16DIP

0
ALD310708APCL

ALD310708APCL

Advanced Linear Devices, Inc.

MOSFET 4 P-CH 8V 16DIP

0
ALD212904PAL

ALD212904PAL

Advanced Linear Devices, Inc.

MOSFET 2N-CH 10.6V 0.08A 8DIP

0
ALD110814SCL

ALD110814SCL

Advanced Linear Devices, Inc.

MOSFET 4N-CH 10.6V 16SOIC

19
ALD210800ASCL

ALD210800ASCL

Advanced Linear Devices, Inc.

MOSFET 4N-CH 10.6V 0.08A 16SOIC

39
ALD114835PCL

ALD114835PCL

Advanced Linear Devices, Inc.

MOSFET 4N-CH 10.6V 16DIP

0
ALD114804APCL

ALD114804APCL

Advanced Linear Devices, Inc.

MOSFET 4N-CH 10.6V 16DIP

0
ALD1105PBL

ALD1105PBL

Advanced Linear Devices, Inc.

MOSFET 2N/2P-CH 10.6V 14DIP

745
ALD1102APAL

ALD1102APAL

Advanced Linear Devices, Inc.

MOSFET 2P-CH 10.6V 8DIP

0
ALD1116PAL

ALD1116PAL

Advanced Linear Devices, Inc.

MOSFET 2N-CH 10.6V 8DIP

302
ALD110802PCL

ALD110802PCL

Advanced Linear Devices, Inc.

MOSFET 4N-CH 10.6V 16DIP

0
ALD110904PAL

ALD110904PAL

Advanced Linear Devices, Inc.

MOSFET 2N-CH 10.6V 8DIP

0
ALD1107PBL

ALD1107PBL

Advanced Linear Devices, Inc.

MOSFET 4P-CH 10.6V 14DIP

707
ALD210814PCL

ALD210814PCL

Advanced Linear Devices, Inc.

MOSFET 4N-CH 10.6V 0.08A 16DIP

0
ALD210808ASCL

ALD210808ASCL

Advanced Linear Devices, Inc.

MOSFET 4N-CH 10.6V 0.08A 16SOIC

0

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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