Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
SI1926DL-T1-GE3

SI1926DL-T1-GE3

Vishay / Siliconix

MOSFET 2N-CH 60V 0.37A SOT363

2588

SIA923EDJ-T4-GE3

SIA923EDJ-T4-GE3

Vishay / Siliconix

MOSFET P-CH 20V SC-70-6

0

SQJ951EP-T1_BE3

SQJ951EP-T1_BE3

Vishay / Siliconix

MOSFET 2P-CH 30V 30A PPAK

5965

SQJ912DEP-T1_GE3

SQJ912DEP-T1_GE3

Vishay / Siliconix

AUTOMOTIVE DUAL N-CHANNEL 40 V (

3050

SI8902AEDB-T2-E1

SI8902AEDB-T2-E1

Vishay / Siliconix

N-CHANNEL 24-V (D-S) MOSFET

0

SQ1539EH-T1_GE3

SQ1539EH-T1_GE3

Vishay / Siliconix

MOSFET N/P-CH 30V POWERPAKSC70-6

0

SQJB46EP-T1_GE3

SQJB46EP-T1_GE3

Vishay / Siliconix

AUTOMOTIVE DUAL N-CHANNEL 40 V (

3050

SQJ910AEP-T2_GE3

SQJ910AEP-T2_GE3

Vishay / Siliconix

DUAL N-CHANNEL 30-V (D-S) 175C M

0

SISF04DN-T1-GE3

SISF04DN-T1-GE3

Vishay / Siliconix

MOSFET DUAL N-CH 30V PPAK 1212-8

5785

SIZF360DT-T1-GE3

SIZF360DT-T1-GE3

Vishay / Siliconix

MOSFET DL N-CH 30V PPAIR 3X3FDC

50

SI1036X-T1-GE3

SI1036X-T1-GE3

Vishay / Siliconix

MOSFET 2 N-CH 30V 610MA SC89-6

4380

SIZF914DT-T1-GE3

SIZF914DT-T1-GE3

Vishay / Siliconix

DUAL N-CH 25-V (D-S) MOSFET W/SC

0

SI7946ADP-T1-GE3

SI7946ADP-T1-GE3

Vishay / Siliconix

MOSFET 2 N-CH 150V POWERPAK SO8

0

SIZ998BDT-T1-GE3

SIZ998BDT-T1-GE3

Vishay / Siliconix

DUAL N-CHANNEL 30-V (D-S) MOSFET

35

SQJB46ELP-T1_GE3

SQJB46ELP-T1_GE3

Vishay / Siliconix

AUTOMOTIVE DUAL N-CHANNEL 40 V (

3050

SIZ980BDT-T1-GE3

SIZ980BDT-T1-GE3

Vishay / Siliconix

MOSFET DUAL N-CH 30V PPAIR 6 X 5

5420

SI1926DL-T1-BE3

SI1926DL-T1-BE3

Vishay / Siliconix

MOSFET 2N-CH 60V 0.37A SOT363

2940

SQJ912AEP-T2_BE3

SQJ912AEP-T2_BE3

Vishay / Siliconix

MOSFET 2N-CH 40V 30A PPAK SO-8

0

SQ1563AEH-T1_GE3

SQ1563AEH-T1_GE3

Vishay / Siliconix

MOSFET N/P-CH 20V POWERPAKSC70-6

3723

SISF06DN-T1-GE3

SISF06DN-T1-GE3

Vishay / Siliconix

COMMON-DRAIN DUAL N-CH 30V (S1-S

5029

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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