Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
SI7872DP-T1-GE3

SI7872DP-T1-GE3

Vishay / Siliconix

MOSFET 2N-CH 30V 6.4A PPAK SO-8

0

SI1557DH-T1-E3

SI1557DH-T1-E3

Vishay / Siliconix

MOSFET N/P-CH 12V 1.2A SC70-6

0

SIA511DJ-T1-GE3

SIA511DJ-T1-GE3

Vishay / Siliconix

MOSFET N/P-CH 12V 4.5A SC70-6

0

SI5504DC-T1-GE3

SI5504DC-T1-GE3

Vishay / Siliconix

MOSFET N/P-CH 30V 2.9A 1206-8

0

SI1553DL-T1

SI1553DL-T1

Vishay / Siliconix

MOSFET N/P-CH 20V SC70-6

0

SI4920DY-T1-GE3

SI4920DY-T1-GE3

Vishay / Siliconix

MOSFET 2N-CH 30V 8-SOIC

0

SI4830CDY-T1-GE3

SI4830CDY-T1-GE3

Vishay / Siliconix

MOSFET 2N-CH 30V 8A 8-SOIC

0

SI1024X-T1-E3

SI1024X-T1-E3

Vishay / Siliconix

MOSFET 2N-CH 20V 0.485A SOT563F

0

SI7948DP-T1-GE3

SI7948DP-T1-GE3

Vishay / Siliconix

MOSFET 2N-CH 60V 3A PPAK SO-8

0

SI7842DP-T1-E3

SI7842DP-T1-E3

Vishay / Siliconix

MOSFET 2N-CH 30V 6.3A PPAK SO-8

0

SI1912EDH-T1-E3

SI1912EDH-T1-E3

Vishay / Siliconix

MOSFET 2N-CH 20V 1.13A SC70-6

0

SI6993DQ-T1-E3

SI6993DQ-T1-E3

Vishay / Siliconix

MOSFET 2P-CH 30V 3.6A 8TSSOP

0

SI4908DY-T1-GE3

SI4908DY-T1-GE3

Vishay / Siliconix

MOSFET 2N-CH 40V 5A 8-SOIC

0

SI4942DY-T1-E3

SI4942DY-T1-E3

Vishay / Siliconix

MOSFET 2N-CH 40V 5.3A 8-SOIC

0

SI3983DV-T1-GE3

SI3983DV-T1-GE3

Vishay / Siliconix

MOSFET 2P-CH 20V 2.1A 6-TSOP

0

SI4670DY-T1-E3

SI4670DY-T1-E3

Vishay / Siliconix

MOSFET 2N-CH 25V 8A 8SOIC

0

SI3905DV-T1-E3

SI3905DV-T1-E3

Vishay / Siliconix

MOSFET 2P-CH 8V 6-TSOP

0

SI1555DL-T1-E3

SI1555DL-T1-E3

Vishay / Siliconix

MOSFET N/P-CH 20V/8V SC70-6

0

SI1034X-T1-E3

SI1034X-T1-E3

Vishay / Siliconix

MOSFET 2N-CH 20V 0.18A SOT563F

0

SI1563EDH-T1-E3

SI1563EDH-T1-E3

Vishay / Siliconix

MOSFET N/P-CH 20V 1.13A SC70-6

0

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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