Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
SI3590DV-T1-GE3

SI3590DV-T1-GE3

Vishay / Siliconix

MOSFET N/P-CH 30V 2.5A 6-TSOP

5557

SQJ951EP-T1_GE3

SQJ951EP-T1_GE3

Vishay / Siliconix

MOSFET 2P-CH 30V 30A PPAK

2895

SI1035X-T1-GE3

SI1035X-T1-GE3

Vishay / Siliconix

MOSFET N/P-CH 20V SC-89

2782

SI7904BDN-T1-E3

SI7904BDN-T1-E3

Vishay / Siliconix

MOSFET 2N-CH 20V 6A 1212-8

1857

SI4943CDY-T1-GE3

SI4943CDY-T1-GE3

Vishay / Siliconix

MOSFET 2P-CH 20V 8A 8-SOIC

5922

SIA913ADJ-T1-GE3

SIA913ADJ-T1-GE3

Vishay / Siliconix

MOSFET 2P-CH 12V 4.5A SC70-6

15927

SI4228DY-T1-E3

SI4228DY-T1-E3

Vishay / Siliconix

MOSFET 2N-CH 25V 8A 8SO

0

SI6562CDQ-T1-GE3

SI6562CDQ-T1-GE3

Vishay / Siliconix

MOSFET N/P-CH 20V 6.7A 8-TSSOP

45597

SI7956DP-T1-E3

SI7956DP-T1-E3

Vishay / Siliconix

MOSFET 2N-CH 150V 2.6A PPAK SO-8

0

SI4963BDY-T1-E3

SI4963BDY-T1-E3

Vishay / Siliconix

MOSFET 2P-CH 20V 4.9A 8-SOIC

11722

SIZ340BDT-T1-GE3

SIZ340BDT-T1-GE3

Vishay / Siliconix

DUAL N-CHANNEL 30-V (D-S) MOSFET

0

SI1902CDL-T1-BE3

SI1902CDL-T1-BE3

Vishay / Siliconix

MOSFET 2N-CH 20V 1.1A SC-70-6

3000

SI4922BDY-T1-E3

SI4922BDY-T1-E3

Vishay / Siliconix

MOSFET 2N-CH 30V 8A 8-SOIC

7420

SIZ918DT-T1-GE3

SIZ918DT-T1-GE3

Vishay / Siliconix

MOSFET 2N-CH 30V 16A POWERPAIR

13904

SQJB70EP-T1_GE3

SQJB70EP-T1_GE3

Vishay / Siliconix

MOSFET 2 N-CH 100V POWERPAK SO8

36

SIA777EDJ-T1-GE3

SIA777EDJ-T1-GE3

Vishay / Siliconix

MOSFET N/P-CH 20V/12V SC70-6L

0

SI4210DY-T1-GE3

SI4210DY-T1-GE3

Vishay / Siliconix

MOSFET 2N-CH 30V 6.5A 8-SOIC

340

SIS903DN-T1-GE3

SIS903DN-T1-GE3

Vishay / Siliconix

MOSFET DUAL P-CHAN POWERPAK 1212

1986

SI5517DU-T1-GE3

SI5517DU-T1-GE3

Vishay / Siliconix

MOSFET N/P-CH 20V 6A CHIPFET

123

SI6968BEDQ-T1-E3

SI6968BEDQ-T1-E3

Vishay / Siliconix

MOSFET 2N-CH 20V 5.2A 8TSSOP

2634

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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