Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
SQ4282EY-T1_GE3

SQ4282EY-T1_GE3

Vishay / Siliconix

MOSFET 2 N-CHANNEL 30V 8A 8SOIC

1962

SI4808DY-T1-GE3

SI4808DY-T1-GE3

Vishay / Siliconix

MOSFET 2N-CH 30V 5.7A 8SOIC

0

SIA537EDJ-T1-GE3

SIA537EDJ-T1-GE3

Vishay / Siliconix

MOSFET N/P-CH 12V/20V SC-70-6L

11630

SIA911ADJ-T1-GE3

SIA911ADJ-T1-GE3

Vishay / Siliconix

MOSFET 2P-CH 20V 4.5A SC70-6

0

SIS932EDN-T1-GE3

SIS932EDN-T1-GE3

Vishay / Siliconix

MOSFET N-CH DL 30V PWRPAK 1212-8

9887

SIZ980DT-T1-GE3

SIZ980DT-T1-GE3

Vishay / Siliconix

MOSFET 2 N-CH 30V 8-POWERPAIR

7714

SIA929DJ-T1-GE3

SIA929DJ-T1-GE3

Vishay / Siliconix

MOSFET 2P-CH 30V 4.5A SC70-6

474

SI7218DN-T1-E3

SI7218DN-T1-E3

Vishay / Siliconix

MOSFET 2N-CH 30V 24A 1212-8

762

SI1900DL-T1-E3

SI1900DL-T1-E3

Vishay / Siliconix

MOSFET 2N-CH 30V 0.59A SC70-6

63530

SIA778DJ-T1-GE3

SIA778DJ-T1-GE3

Vishay / Siliconix

MOSFET 2N-CH 12V/20V SC70-6

874

SI3900DV-T1-E3

SI3900DV-T1-E3

Vishay / Siliconix

MOSFET 2N-CH 20V 2A 6-TSOP

52428

SIZ348DT-T1-GE3

SIZ348DT-T1-GE3

Vishay / Siliconix

MOSFET DUAL N-CHAN 30V POWERPAIR

6000

SI1922EDH-T1-BE3

SI1922EDH-T1-BE3

Vishay / Siliconix

MOSFET 2N-CH 20V 1.3A SOT-363

0

SQJB00EP-T1_GE3

SQJB00EP-T1_GE3

Vishay / Siliconix

MOSFET 2 N-CH 60V POWERPAK SO8

0

SI7994DP-T1-GE3

SI7994DP-T1-GE3

Vishay / Siliconix

MOSFET 2N-CH 30V 60A PPAK SO-8

1741

SQJ504EP-T1_GE3

SQJ504EP-T1_GE3

Vishay / Siliconix

MOSFET N/P CHAN 40V POWERPAK SO-

7970

SQ9945BEY-T1_BE3

SQ9945BEY-T1_BE3

Vishay / Siliconix

MOSFET 2N-CH 60V 5.4A

2480

SIA517DJ-T1-GE3

SIA517DJ-T1-GE3

Vishay / Siliconix

MOSFET N/P-CH 12V 4.5A SC-70-6

13396

SQJ980AEP-T1_GE3

SQJ980AEP-T1_GE3

Vishay / Siliconix

MOSFET 2 N-CH 75V POWERPAK SO8

1966

SQJQ906E-T1_GE3

SQJQ906E-T1_GE3

Vishay / Siliconix

MOSFET 2 N-CH 40V POWERPAK8X8

1899

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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