Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
SQJ990EP-T1_GE3

SQJ990EP-T1_GE3

Vishay / Siliconix

MOSFET 2 N-CH 100V POWERPAK SO8

2066

SI7942DP-T1-GE3

SI7942DP-T1-GE3

Vishay / Siliconix

MOSFET 2N-CH 100V 3.8A PPAK SO-8

3181

SQ4937EY-T1_BE3

SQ4937EY-T1_BE3

Vishay / Siliconix

MOSFET 2 P-CHANNEL 30V 5A 8SOIC

2500

SI7232DN-T1-GE3

SI7232DN-T1-GE3

Vishay / Siliconix

MOSFET 2N-CH 20V 25A PPAK 1212-8

32993

SQJB42EP-T1_GE3

SQJB42EP-T1_GE3

Vishay / Siliconix

MOSFET 2 N-CH 40V POWERPAK SO8

1202

SI4943BDY-T1-E3

SI4943BDY-T1-E3

Vishay / Siliconix

MOSFET 2P-CH 20V 6.3A 8-SOIC

2984

SI7216DN-T1-E3

SI7216DN-T1-E3

Vishay / Siliconix

MOSFET 2N-CH 40V 6A 1212-8

0

SQJQ960EL-T1_GE3

SQJQ960EL-T1_GE3

Vishay / Siliconix

MOSFET 2 N-CH 60V POWERPAK8X8

900

SI4936BDY-T1-E3

SI4936BDY-T1-E3

Vishay / Siliconix

MOSFET 2N-CH 30V 6.9A 8-SOIC

0

SI7922DN-T1-GE3

SI7922DN-T1-GE3

Vishay / Siliconix

MOSFET 2N-CH 100V 1.8A 1212-8

65827

SQJ914EP-T1_GE3

SQJ914EP-T1_GE3

Vishay / Siliconix

MOSFET 2 N-CH 30V POWERPAK SO8

2528

SI5935CDC-T1-E3

SI5935CDC-T1-E3

Vishay / Siliconix

MOSFET 2P-CH 20V 4A 1206-8

2900

SI1965DH-T1-E3

SI1965DH-T1-E3

Vishay / Siliconix

MOSFET 2P-CH 12V 1.3A SC70-6

482

SQ4920EY-T1_GE3

SQ4920EY-T1_GE3

Vishay / Siliconix

MOSFET 2N-CH 30V 8A 8SO

8988

SI1034CX-T1-GE3

SI1034CX-T1-GE3

Vishay / Siliconix

MOSFET 2N-CH 20V SC89-6

81492

SQ4937EY-T1_GE3

SQ4937EY-T1_GE3

Vishay / Siliconix

MOSFET 2 P-CHANNEL 30V 5A 8SOIC

2483

SI7942DP-T1-E3

SI7942DP-T1-E3

Vishay / Siliconix

MOSFET 2N-CH 100V 3.8A PPAK SO-8

6438

SIZF916DT-T1-GE3

SIZF916DT-T1-GE3

Vishay / Siliconix

MOSFET N-CH DUAL 30V

1900

SQJB80EP-T1_GE3

SQJB80EP-T1_GE3

Vishay / Siliconix

MOSFET 2 N-CH 80V POWERPAK SO8

998

SIZ250DT-T1-GE3

SIZ250DT-T1-GE3

Vishay / Siliconix

MOSFET DUAL N-CH 60-V POWERPAIR

11667

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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