Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
SI7949DP-T1-E3

SI7949DP-T1-E3

Vishay / Siliconix

MOSFET 2P-CH 60V 3.2A PPAK SO-8

4779

SI7212DN-T1-GE3

SI7212DN-T1-GE3

Vishay / Siliconix

MOSFET 2N-CH 30V 4.9A 1212-8

707

SI7904BDN-T1-GE3

SI7904BDN-T1-GE3

Vishay / Siliconix

MOSFET 2N-CH 20V 6A PPAK 1212-8

541

SI6926ADQ-T1-E3

SI6926ADQ-T1-E3

Vishay / Siliconix

MOSFET 2N-CH 20V 4.1A 8TSSOP

19812

SQJQ906EL-T1_GE3

SQJQ906EL-T1_GE3

Vishay / Siliconix

MOSFET 2 N-CH 40V POWERPAK8X8

1280

SI7938DP-T1-GE3

SI7938DP-T1-GE3

Vishay / Siliconix

MOSFET 2N-CH 40V 60A PPAK SO-8

21359

SIZF906ADT-T1-GE3

SIZF906ADT-T1-GE3

Vishay / Siliconix

MOSFET DUAL N-CHAN 30V

29

SI1965DH-T1-GE3

SI1965DH-T1-GE3

Vishay / Siliconix

MOSFET 2P-CH 12V 1.3A SC70-6

7918

SISF20DN-T1-GE3

SISF20DN-T1-GE3

Vishay / Siliconix

MOSFET DL N-CH 60V PPK 1212-8SCD

24

SIA906EDJ-T1-GE3

SIA906EDJ-T1-GE3

Vishay / Siliconix

MOSFET 2N-CH 20V 4.5A SC70-6

8934

SQJ910AEP-T1_GE3

SQJ910AEP-T1_GE3

Vishay / Siliconix

MOSFET 2 N-CH 30V POWERPAK SO8

1132

SIZ704DT-T1-GE3

SIZ704DT-T1-GE3

Vishay / Siliconix

MOSFET 2N-CH 30V 12A PPAK 1212-8

178

SI4214DDY-T1-E3

SI4214DDY-T1-E3

Vishay / Siliconix

MOSFET 2N-CH 30V 8.5A 8SO

0

SI8902EDB-T2-E1

SI8902EDB-T2-E1

Vishay / Siliconix

MOSFET 2N-CH 20V 3.9A 6-MFP

0

SQ4284EY-T1_BE3

SQ4284EY-T1_BE3

Vishay / Siliconix

MOSFET 2N-CH 40V 8A 8SOIC

2484

SI7980DP-T1-GE3

SI7980DP-T1-GE3

Vishay / Siliconix

MOSFET 2N-CH 20V 8A PPAK SO-8

85

SI6926ADQ-T1-GE3

SI6926ADQ-T1-GE3

Vishay / Siliconix

MOSFET 2N-CH 20V 4.1A 8-TSSOP

44188

SIZ342ADT-T1-GE3

SIZ342ADT-T1-GE3

Vishay / Siliconix

MOSFET DL N-CH 30V PPAIR 3 X 3

5818

SI4936ADY-T1-GE3

SI4936ADY-T1-GE3

Vishay / Siliconix

MOSFET 2N-CH 30V 4.4A 8-SOIC

0

SQJQ904E-T1_GE3

SQJQ904E-T1_GE3

Vishay / Siliconix

MOSFET 2 N-CH 40V POWERPAK8X8

618

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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