Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Arrays

Part Number	Description / PDF	Quantity
SQJ204EP-T1_GE3 Vishay / Siliconix	MOSFET DUAL N-CH 12V PPAK SO-8L	46
FDW2510NZ	N-CHANNEL POWER MOSFET	19149
SI1025X-T1-GE3 Vishay / Siliconix	MOSFET 2P-CH 60V 0.19A SC-89	60696
DMHC3025LSD-13 Zetex Semiconductors (Diodes Inc.)	MOSFET 2N/2P-CH 30V 8SO	50
APTC60DDAM35T3G Roving Networks / Microchip Technology	MOSFET 2N-CH 600V 72A SP3	0
SH8K51GZETB ROHM Semiconductor	4V DRIVE NCH+NCH MOSFET. SH8K51	2500
SQ9945BEY-T1_GE3 Vishay / Siliconix	MOSFET 2N-CH 60V 5.4A	3362
DMC25D1UVT-13 Zetex Semiconductors (Diodes Inc.)	MOSFET N/P-CH 25V/12V TSOT26	0
SI4276DY-T1-E3 Vishay / Siliconix	MOSFET 2N-CH 30V 8A 8SO	0
SI9926CDY-T1-GE3 Vishay / Siliconix	MOSFET 2N-CH 20V 8A 8-SOIC	17961
NTMD5836NLR2G	SMALL SIGNAL N-CHANNEL MOSFET	5730
TT8K11TCR ROHM Semiconductor	MOSFET 2N-CH 30V 3A TSST8	2189
FD6M043N08	N-CHANNEL POWER MOSFET	1404
MTMC8E280LBF Panasonic	MOSFET 2N-CH 20V 7A WMINI8	4983
SI5513CDC-T1-E3 Vishay / Siliconix	MOSFET N/P-CH 20V 4A 1206-8	0
US6M1TR ROHM Semiconductor	MOSFET N/P-CH 30V/20V TUMT6	21
FDMA1028NZ Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 20V 3.7A 6MICROFET	0
SI4931DY-T1-E3 Vishay / Siliconix	MOSFET 2P-CH 12V 6.7A 8-SOIC	24005
DMC1028UFDB-7 Zetex Semiconductors (Diodes Inc.)	MOSFET N/P-CH 12V/20V 6UDFN	10392
DMG4822SSDQ-13 Zetex Semiconductors (Diodes Inc.)	MOSFETDUAL N-CHAN 30VSO-8	4392

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
JFET Array	Low noise, high input impedance	Analog switches, RF amplifiers
MOSFET Array (Enhancement)	High switching speed, low on-resistance	Power supplies, motor drivers
MOSFET Array (Depletion)	Normally-on behavior, high durability	Level shifters, analog circuits
HEMT Array	High electron mobility, microwave performance	Satellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

Parameter	Description	Importance
R_DS(on)	On-state resistance	Impacts conduction loss and efficiency
V_DS(max)	Max drain-source voltage	Determines voltage rating
I_D(max)	Max continuous drain current	Defines current handling capability
Q_g	Gate charge	Affects switching speed and driver requirements
Thermal Resistance	Junction-to-ambient resistance	Crucial for thermal management

5. Application Fields

Consumer Electronics: Smartphone power management, audio amplifiers
Automotive: EV battery management systems, 48V DC-DC converters
Industrial: PLCs, motor drives, welding equipment
Telecommunications: Base station RF amplifiers, optical network transceivers
Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

Manufacturer	Representative Products	Key Features
Infineon Technologies	BTS724GX	Smart power MOSFET array with diagnostic functions
STMicroelectronics	IPD90N03S4-01	High-side switch with 90A rating
ON Semiconductor	NVN4080	Automotive-qualified 80V intelligent power array
Nexperia	PMBT2369	High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low R_DS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies