Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
TPC8407,LQ(S

TPC8407,LQ(S

Toshiba Electronic Devices and Storage Corporation

MOSFET N/P-CH 30V 9A/7.4A 8SOP

0

SLA5085

SLA5085

Sanken Electric Co., Ltd.

MOSFET 5N-CH 60V 10A 12-SIP

510

RFD10N05SM

RFD10N05SM

10A, 50V, N-CHANNEL,

11883

NVMFD5485NLT1G

NVMFD5485NLT1G

POWER FIELD-EFFECT TRANSISTOR

6000

SSM6L12TU,LF

SSM6L12TU,LF

Toshiba Electronic Devices and Storage Corporation

MOSFET N/P-CH 30V 500MA UF6

0

AUIRF7379QTR

AUIRF7379QTR

IR (Infineon Technologies)

MOSFET N/P-CH 30V 5.8A/4.3A 8SO

0

NTLUD3A260PZTBG

NTLUD3A260PZTBG

Sanyo Semiconductor/ON Semiconductor

MOSFET 2P-CH 20V 1.3A 6UDFN

288045000

FDMS3600AS

FDMS3600AS

Sanyo Semiconductor/ON Semiconductor

MOSFET 2N-CH 25V 15A/30A POWER56

6000

AO6800

AO6800

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 30V 3.4A 6-TSOP

0

DMG6898LSD-13

DMG6898LSD-13

Zetex Semiconductors (Diodes Inc.)

MOSFET 2N-CH 20V 9.5A 8SO

740

FDMD8680

FDMD8680

Sanyo Semiconductor/ON Semiconductor

MOSFET 2 N-CH 80V 66A 8-PQFN

1626

SH8M14TB1

SH8M14TB1

ROHM Semiconductor

MOSFET N/P-CH 30V 9A/7A SOP

0

BUK9K5R6-30EX

BUK9K5R6-30EX

Nexperia

MOSFET 2N-CH 30V 40A 56LFPAK

775

DMC4040SSDQ-13

DMC4040SSDQ-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N/P-CH 40V 7.5A 8SO

0

SH8J62TB1

SH8J62TB1

ROHM Semiconductor

MOSFET 2P-CH 30V 4.5A SOP8

420

CMLDM7003TG TR PBFREE

CMLDM7003TG TR PBFREE

Central Semiconductor

MOSFET 2N-CH 50V 0.28A SOT563

1077521000

SI3932DV-T1-GE3

SI3932DV-T1-GE3

Vishay / Siliconix

MOSFET 2N-CH 30V 3.7A 6-TSOP

105987

SSM6N16FUTE85LF

SSM6N16FUTE85LF

Toshiba Electronic Devices and Storage Corporation

MOSFET 2N-CH 20V 0.1A US6

5360

FDMC3300NZA

FDMC3300NZA

N-CHANNEL POWER MOSFET

9169

DMP2160UFDBQ-7

DMP2160UFDBQ-7

Zetex Semiconductors (Diodes Inc.)

MOSFET 2P-CH 20V 3.8A 6UDFN

138945

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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