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Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
IPI60R380C6

IPI60R380C6

IR (Infineon Technologies)

COOLMOS N-CHANNEL POWER MOSFET

234
FDS6975

FDS6975

Sanyo Semiconductor/ON Semiconductor

MOSFET 2P-CH 30V 6A 8SOIC

3721
BSD235NH6327XTSA1

BSD235NH6327XTSA1

IR (Infineon Technologies)

MOSFET 2N-CH 20V 0.95A SOT363

22270
TT8J11TCR

TT8J11TCR

ROHM Semiconductor

MOSFET 2P-CH 12V 3.5A TSST8

2380
SIRB40DP-T1-GE3

SIRB40DP-T1-GE3

Vishay / Siliconix

MOSFET 2 N-CH 40V POWERPAK SO8

3719
NVMFD5483NLWFT1G

NVMFD5483NLWFT1G

Sanyo Semiconductor/ON Semiconductor

MOSFET 2N-CH 60V 6.4A 8DFN

0
FX20KMJ-3#B00

FX20KMJ-3#B00

Renesas Electronics America

HIGH SPEED SWITCHING P CHANNEL ,

94471
BSO211PHXUMA1

BSO211PHXUMA1

IR (Infineon Technologies)

3.2A, 20V, 0.067OHM, 2-ELEMENT,

27500
DMTH6010LPD-13

DMTH6010LPD-13

Zetex Semiconductors (Diodes Inc.)

MOSFET 2N-CHA 60V 13.1A POWERDI

30000
DMC2025UFDB-13

DMC2025UFDB-13

Zetex Semiconductors (Diodes Inc.)

MOSFET BVDSS: 8V-24V U-DFN2020-6

0
FDS6984AS

FDS6984AS

Sanyo Semiconductor/ON Semiconductor

MOSFET 2N-CH 30V 5.5A/8.5A 8SOIC

0
DMP2065UFDB-13

DMP2065UFDB-13

Zetex Semiconductors (Diodes Inc.)

MOSFET 2 P-CH 4.5A UDFN2020-6

0
DMP56D0UV-7

DMP56D0UV-7

Zetex Semiconductors (Diodes Inc.)

MOSFET 2P-CH 50V 0.16A SOT563

33
ALD110900SAL

ALD110900SAL

Advanced Linear Devices, Inc.

MOSFET 2N-CH 10.6V 8SOIC

1114
NTLGD3502NT1G

NTLGD3502NT1G

N-CHANNEL POWER MOSFET

14990
SI7212DN-T1-E3

SI7212DN-T1-E3

Vishay / Siliconix

MOSFET 2N-CH 30V 4.9A 1212-8

2596
UPA1874BGR-9JG-E1-A

UPA1874BGR-9JG-E1-A

Renesas Electronics America

POWER, 8A, 30V, N-CHANNEL MOSFET

6000
MPIC2112P

MPIC2112P

HALF BRIDGE BASED MOSFET DRIVER,

126925
EPC2102ENGRT

EPC2102ENGRT

EPC

GANFET 2 N-CHANNEL 60V 23A DIE

0
CAS300M12BM2

CAS300M12BM2

Wolfspeed - a Cree company

MOSFET 2N-CH 1200V 404A MODULE

0

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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