Transistors - Bipolar (BJT) - Single, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
NHDTA124EUX

NHDTA124EUX

Nexperia

NHDTA124EU/SOT323/SC-70

3000

PDTA123JTVL

PDTA123JTVL

Nexperia

TRANS PREBIAS PNP 250MW TO236AB

7105

PDTC124XT,215

PDTC124XT,215

Nexperia

TRANS PREBIAS NPN 50V TO236AB

23

PDTB113EUX

PDTB113EUX

Nexperia

TRANS PREBIAS PNP 0.425W

0

PDTA124XU,115

PDTA124XU,115

Nexperia

TRANS PREBIAS PNP 200MW SOT323

0

PDTA144TM,315

PDTA144TM,315

Nexperia

NOW NEXPERIA PDTA144TM - SMALL S

158100

PBRN113ET,215

PBRN113ET,215

Nexperia

TRANS PREBIAS NPN 250MW TO236AB

220

PDTC114EU,115

PDTC114EU,115

Nexperia

TRANS PREBIAS NPN 50V SOT323

269325

NHDTC143ZTR

NHDTC143ZTR

Nexperia

NHDTC143ZT/SOT23/TO-236AB

5930

PDTB114ETVL

PDTB114ETVL

Nexperia

TRANS PREBIAS PNP 0.46W

0

PDTC143ET,215

PDTC143ET,215

Nexperia

TRANS PREBIAS NPN 50V TO236AB

32189

PDTC123TT,235

PDTC123TT,235

Nexperia

TRANS PREBIAS NPN 250MW TO236AB

0

PDTC115TMB,315

PDTC115TMB,315

Nexperia

TRANS PREBIAS NPN 250MW 3DFN

0

PDTC123EMB,315

PDTC123EMB,315

Nexperia

TRANS PREBIAS NPN 50V DFN1006B-3

0

PDTC124XU,115

PDTC124XU,115

Nexperia

TRANS PREBIAS NPN 50V SOT323

69110

NHDTC124ETVL

NHDTC124ETVL

Nexperia

NHDTC124ET/SOT23/TO-236AB

9790

PDTC143ZU,115

PDTC143ZU,115

Nexperia

TRANS PREBIAS NPN 50V SOT323

42291

PDTA113ZU,115

PDTA113ZU,115

Nexperia

TRANS PREBIAS PNP 50V SOT323

0

PDTA123YT,215

PDTA123YT,215

Nexperia

TRANS PREBIAS PNP 50V TO236AB

1390

PDTA123EU,115

PDTA123EU,115

Nexperia

TRANS PREBIAS PNP 50V SOT323

0

Transistors - Bipolar (BJT) - Single, Pre-Biased

1. Overview

Pre-biased bipolar junction transistors (BJTs) are discrete semiconductor devices with integrated biasing resistors, designed to simplify circuit design and improve operational stability. Unlike standard BJTs requiring external biasing components, pre-biased BJTs incorporate internal resistors to set the base-emitter voltage and collector current. These devices are critical in modern electronics for applications demanding compact design, consistent performance, and reduced component count. Their ability to maintain stable operation under varying temperature and voltage conditions makes them essential in consumer electronics, industrial automation, and automotive systems.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN Pre-Biased BJTPositive bias resistor network, low-side switchingLogic-level switching, LED drivers
PNP Pre-Biased BJTNegative bias resistor network, high-side switchingPower supply control, relay drivers
Digital TransistorIntegrated resistors with ESD protectionDigital logic circuits, portable devices

3. Structure and Composition

Pre-biased BJTs consist of a silicon semiconductor die with three doped regions (emitter, base, collector) forming two p-n junctions. The key structural elements include: - Monolithic Resistor Network: Thin-film or diffused resistors embedded in the die for fixed biasing - Metal Contacts: Aluminum or copper layers for external connections - Encapsulation: Plastic or ceramic packaging with standard pinouts (e.g., SOT-23, TO-92) - Passivation Layer: Silicon dioxide/nitride coating to prevent surface contamination

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base currentDetermines amplification capability
Max Collector Voltage (VCEO)Max voltage across collector-emitterDefines operating voltage range
Transition Frequency (fT)Frequency response limitCritical for RF and switching applications
Power Dissipation (Ptot)Max thermal power handlingDictates thermal management needs
Built-in Resistor Ratio (R1/R2)Internal resistor division ratioControls bias point stability

5. Application Areas

Main industries and typical equipment: - Consumer Electronics: Mobile phone chargers, wearable devices - Industrial Automation: PLC modules, motor drivers - Automotive: Sensor interfaces, LED lighting systems - Telecommunications: Base station power amplifiers - Power Management: DC-DC converter switches

6. Leading Manufacturers and Products

ManufacturerKey ProductsFeatures
ON SemiconductorMMBT3904L200mA NPN transistor with 47k bias resistors
Toshiba2SB1958PNP device with built-in 10k /4.7k resistor network
STMicroelectronicsSM6T120NAutomotive-grade digital transistor with ESD protection

7. Selection Guidelines

Key considerations: - Match hFE with required amplification/saturation characteristics - Confirm VCEO rating exceeds circuit voltage requirements - Select resistor ratios for desired bias point (e.g., R1=10k , R2=22k for mid-range bias) - Prioritize thermal performance in high-power applications - Consider package type (SMD vs. through-hole) for PCB constraints

8. Industry Trends

Emerging trends include: - Miniaturization: Development of 0.4mm pitch WLCSP packages - Integrated protection: ESD/clamp diodes in standard designs - High-frequency variants: fT > 5GHz for 5G infrastructure - Automotive qualification: Increased demand for AEC-Q101 certified devices - Green manufacturing: Lead-free packaging and low-toxicity materials

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