Transistors - Bipolar (BJT) - Single, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
PDTC124EM,315

PDTC124EM,315

Nexperia

TRANS PREBIAS NPN 50V DFN1006-3

0

PDTC123YT,215

PDTC123YT,215

Nexperia

TRANS PREBIAS NPN 50V TO236AB

4872

PDTC114EM,315

PDTC114EM,315

Nexperia

NPN RESISTOR-EQUIPPED TRANSISTOR

0

PDTC143TT,215

PDTC143TT,215

Nexperia

TRANS PREBIAS NPN 50V TO236AB

7666

NHDTA144EUF

NHDTA144EUF

Nexperia

NHDTA144EU/SOT323/SC-70

10000

NHDTC114YTR

NHDTC114YTR

Nexperia

NHDTC114YT/SOT23/TO-236AB

3000

NHDTC114EUX

NHDTC114EUX

Nexperia

NHDTC114EU/SOT323/SC-70

3000

PDTC144VM,315

PDTC144VM,315

Nexperia

NOW NEXPERIA PDTC144VM - SMALL S

109980

PBRP123YT,215

PBRP123YT,215

Nexperia

TRANS PREBIAS PNP 40V TO236AB

170

PDTA144WU,115

PDTA144WU,115

Nexperia

TRANS PREBIAS PNP 50V SOT323

0

PDTB113EUF

PDTB113EUF

Nexperia

TRANS PREBIAS PNP 0.425W

0

PDTC114ET,215

PDTC114ET,215

Nexperia

TRANS PREBIAS NPN 250MW TO236AB

1370

PDTA114EM,315

PDTA114EM,315

Nexperia

TRANS PREBIAS PNP 250MW SOT883

0

PDTC144TU,115

PDTC144TU,115

Nexperia

TRANS PREBIAS NPN 0.2W SOT323

0

PDTA144WM,315

PDTA144WM,315

Nexperia

NOW NEXPERIA PDTA144WM - SMALL S

200000

PDTB143XTR

PDTB143XTR

Nexperia

TRANS PREBIAS PNP 0.46W

1559

NHDTA123JUX

NHDTA123JUX

Nexperia

NHDTA123JU/SOT323/SC-70

3000

PDTC114TM,315

PDTC114TM,315

Nexperia

SMALL SIGNAL BIPOLAR TRANSISTOR,

0

PDTA114EU,135

PDTA114EU,135

Nexperia

TRANS PREBIAS PNP 200MW SOT323

8273

PDTA124XM,315

PDTA124XM,315

Nexperia

TRANS PREBIAS PNP 50V DFN1006-3

0

Transistors - Bipolar (BJT) - Single, Pre-Biased

1. Overview

Pre-biased bipolar junction transistors (BJTs) are discrete semiconductor devices with integrated biasing resistors, designed to simplify circuit design and improve operational stability. Unlike standard BJTs requiring external biasing components, pre-biased BJTs incorporate internal resistors to set the base-emitter voltage and collector current. These devices are critical in modern electronics for applications demanding compact design, consistent performance, and reduced component count. Their ability to maintain stable operation under varying temperature and voltage conditions makes them essential in consumer electronics, industrial automation, and automotive systems.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN Pre-Biased BJTPositive bias resistor network, low-side switchingLogic-level switching, LED drivers
PNP Pre-Biased BJTNegative bias resistor network, high-side switchingPower supply control, relay drivers
Digital TransistorIntegrated resistors with ESD protectionDigital logic circuits, portable devices

3. Structure and Composition

Pre-biased BJTs consist of a silicon semiconductor die with three doped regions (emitter, base, collector) forming two p-n junctions. The key structural elements include: - Monolithic Resistor Network: Thin-film or diffused resistors embedded in the die for fixed biasing - Metal Contacts: Aluminum or copper layers for external connections - Encapsulation: Plastic or ceramic packaging with standard pinouts (e.g., SOT-23, TO-92) - Passivation Layer: Silicon dioxide/nitride coating to prevent surface contamination

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base currentDetermines amplification capability
Max Collector Voltage (VCEO)Max voltage across collector-emitterDefines operating voltage range
Transition Frequency (fT)Frequency response limitCritical for RF and switching applications
Power Dissipation (Ptot)Max thermal power handlingDictates thermal management needs
Built-in Resistor Ratio (R1/R2)Internal resistor division ratioControls bias point stability

5. Application Areas

Main industries and typical equipment: - Consumer Electronics: Mobile phone chargers, wearable devices - Industrial Automation: PLC modules, motor drivers - Automotive: Sensor interfaces, LED lighting systems - Telecommunications: Base station power amplifiers - Power Management: DC-DC converter switches

6. Leading Manufacturers and Products

ManufacturerKey ProductsFeatures
ON SemiconductorMMBT3904L200mA NPN transistor with 47k bias resistors
Toshiba2SB1958PNP device with built-in 10k /4.7k resistor network
STMicroelectronicsSM6T120NAutomotive-grade digital transistor with ESD protection

7. Selection Guidelines

Key considerations: - Match hFE with required amplification/saturation characteristics - Confirm VCEO rating exceeds circuit voltage requirements - Select resistor ratios for desired bias point (e.g., R1=10k , R2=22k for mid-range bias) - Prioritize thermal performance in high-power applications - Consider package type (SMD vs. through-hole) for PCB constraints

8. Industry Trends

Emerging trends include: - Miniaturization: Development of 0.4mm pitch WLCSP packages - Integrated protection: ESD/clamp diodes in standard designs - High-frequency variants: fT > 5GHz for 5G infrastructure - Automotive qualification: Increased demand for AEC-Q101 certified devices - Green manufacturing: Lead-free packaging and low-toxicity materials

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