Transistors - Bipolar (BJT) - Single, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
PDTC123EU,115

PDTC123EU,115

Nexperia

TRANS PREBIAS NPN 50V SOT323

947

PDTC124ET,215

PDTC124ET,215

Nexperia

TRANS PREBIAS NPN 250MW TO236AB

4522

NHDTC114ETVL

NHDTC114ETVL

Nexperia

NHDTC114ET/SOT23/TO-236AB

9970

PDTA115TM,315

PDTA115TM,315

Nexperia

NOW NEXPERIA PDTA115TM - SMALL S

150000

NHDTA114ETVL

NHDTA114ETVL

Nexperia

NHDTA114ET/SOT23/TO-236AB

10000

PDTA123YU,115

PDTA123YU,115

Nexperia

SMALL SIGNAL BIPOLAR TRANSISTOR,

54750

NHDTC114YUF

NHDTC114YUF

Nexperia

NHDTC114YU/SOT323/SC-70

10000

PDTD113ET,215

PDTD113ET,215

Nexperia

TRANS PREBIAS NPN 250MW TO236AB

363

PDTB123TT,215

PDTB123TT,215

Nexperia

TRANS PREBIAS PNP 250MW TO236AB

0

PDTC123ETVL

PDTC123ETVL

Nexperia

PDTC123ET/SOT23/TO-236AB

0

PDTA124EM,315

PDTA124EM,315

Nexperia

NOW NEXPERIA PDTA124EM - SMALL S

140000

PDTC144VMB,315

PDTC144VMB,315

Nexperia

TRANS PREBIAS NPN 250MW 3DFN

0

PDTB143ETVL

PDTB143ETVL

Nexperia

PDTB1XXXT SERIES - 500 MA, 50 V

37520

PDTA114TU,115

PDTA114TU,115

Nexperia

TRANS PREBIAS PNP 50V SOT323

570

PDTA143XTVL

PDTA143XTVL

Nexperia

PDTA143XT/SOT23/TO-236AB

9313

PDTC124EU,135

PDTC124EU,135

Nexperia

TRANS PREBIAS NPN 200MW SOT323

0

PDTC124XM,315

PDTC124XM,315

Nexperia

TRANS PREBIAS NPN 50V DFN1006-3

0

PDTA144VU,115

PDTA144VU,115

Nexperia

TRANS PREBIAS PNP 50V SOT323

0

PDTC124EU,115

PDTC124EU,115

Nexperia

TRANS PREBIAS NPN 50V SOT323

2795

PDTD114ETR

PDTD114ETR

Nexperia

TRANS PREBIAS NPN 0.425W

31

Transistors - Bipolar (BJT) - Single, Pre-Biased

1. Overview

Pre-biased bipolar junction transistors (BJTs) are discrete semiconductor devices with integrated biasing resistors, designed to simplify circuit design and improve operational stability. Unlike standard BJTs requiring external biasing components, pre-biased BJTs incorporate internal resistors to set the base-emitter voltage and collector current. These devices are critical in modern electronics for applications demanding compact design, consistent performance, and reduced component count. Their ability to maintain stable operation under varying temperature and voltage conditions makes them essential in consumer electronics, industrial automation, and automotive systems.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN Pre-Biased BJTPositive bias resistor network, low-side switchingLogic-level switching, LED drivers
PNP Pre-Biased BJTNegative bias resistor network, high-side switchingPower supply control, relay drivers
Digital TransistorIntegrated resistors with ESD protectionDigital logic circuits, portable devices

3. Structure and Composition

Pre-biased BJTs consist of a silicon semiconductor die with three doped regions (emitter, base, collector) forming two p-n junctions. The key structural elements include: - Monolithic Resistor Network: Thin-film or diffused resistors embedded in the die for fixed biasing - Metal Contacts: Aluminum or copper layers for external connections - Encapsulation: Plastic or ceramic packaging with standard pinouts (e.g., SOT-23, TO-92) - Passivation Layer: Silicon dioxide/nitride coating to prevent surface contamination

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base currentDetermines amplification capability
Max Collector Voltage (VCEO)Max voltage across collector-emitterDefines operating voltage range
Transition Frequency (fT)Frequency response limitCritical for RF and switching applications
Power Dissipation (Ptot)Max thermal power handlingDictates thermal management needs
Built-in Resistor Ratio (R1/R2)Internal resistor division ratioControls bias point stability

5. Application Areas

Main industries and typical equipment: - Consumer Electronics: Mobile phone chargers, wearable devices - Industrial Automation: PLC modules, motor drivers - Automotive: Sensor interfaces, LED lighting systems - Telecommunications: Base station power amplifiers - Power Management: DC-DC converter switches

6. Leading Manufacturers and Products

ManufacturerKey ProductsFeatures
ON SemiconductorMMBT3904L200mA NPN transistor with 47k bias resistors
Toshiba2SB1958PNP device with built-in 10k /4.7k resistor network
STMicroelectronicsSM6T120NAutomotive-grade digital transistor with ESD protection

7. Selection Guidelines

Key considerations: - Match hFE with required amplification/saturation characteristics - Confirm VCEO rating exceeds circuit voltage requirements - Select resistor ratios for desired bias point (e.g., R1=10k , R2=22k for mid-range bias) - Prioritize thermal performance in high-power applications - Consider package type (SMD vs. through-hole) for PCB constraints

8. Industry Trends

Emerging trends include: - Miniaturization: Development of 0.4mm pitch WLCSP packages - Integrated protection: ESD/clamp diodes in standard designs - High-frequency variants: fT > 5GHz for 5G infrastructure - Automotive qualification: Increased demand for AEC-Q101 certified devices - Green manufacturing: Lead-free packaging and low-toxicity materials

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