Transistors - Bipolar (BJT) - Single, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
DTA143EU3T106

DTA143EU3T106

ROHM Semiconductor

DTA143EU3 IS AN DIGITAL TRANSIST

0

DTC044EMT2L

DTC044EMT2L

ROHM Semiconductor

TRANS PREBIAS NPN 50V VMT3

425

DTA115EEBTL

DTA115EEBTL

ROHM Semiconductor

TRANS PREBIAS PNP 150MW EMT3

0

DTD113EKT146

DTD113EKT146

ROHM Semiconductor

TRANS PREBIAS NPN 200MW SMT3

2993

DTC114YU3T106

DTC114YU3T106

ROHM Semiconductor

NPN 100MA 50V DIGITAL TRANSISTOR

320

DTB743ZETL

DTB743ZETL

ROHM Semiconductor

TRANS PREBIAS PNP 150MW EMT3

0

DTA143ZMFHAT2L

DTA143ZMFHAT2L

ROHM Semiconductor

PNP DIGITAL TRANSISTOR (CORRESPO

5536

DTC123JCAT116

DTC123JCAT116

ROHM Semiconductor

NPN 100MA 50V DIGITAL TRANSISTOR

1099

DTA043TMT2L

DTA043TMT2L

ROHM Semiconductor

TRANS PREBIAS PNP 50V VMT3

7925

EML17T2R

EML17T2R

ROHM Semiconductor

TRANS PREBIAS PNP 0.12W EMT5

0

DTC115EEBTL

DTC115EEBTL

ROHM Semiconductor

NPN, 3-PINNPN DIGITAL TRANSISTOR

2995

DTA124ECAT116

DTA124ECAT116

ROHM Semiconductor

PNP -100MA -50V DIGITAL TRANSIST

2096

DTA124TETL

DTA124TETL

ROHM Semiconductor

TRANS PREBIAS PNP 150MW EMT3

0

DTA114TCAHZGT116

DTA114TCAHZGT116

ROHM Semiconductor

PNP -100MA -50V DIGITAL TRANSIST

2000

DTA015TEBTL

DTA015TEBTL

ROHM Semiconductor

TRANS PREBIAS PNP 50V 0.15W SC89

3000

DTC124XCAT116

DTC124XCAT116

ROHM Semiconductor

NPN 100MA 50V DIGITAL TRANSISTOR

2437

DTC115GU3HZGT106

DTC115GU3HZGT106

ROHM Semiconductor

AUTOMOTIVE NPN 100MA 50V DIGITAL

3000

DTA114TU3T106

DTA114TU3T106

ROHM Semiconductor

DTA114TU3 IS AN DIGITAL TRANSIST

2990

DTC114TU3T106

DTC114TU3T106

ROHM Semiconductor

DTC114TU3 IS AN DIGITAL TRANSIST

2585

DTB143EKFRAT146

DTB143EKFRAT146

ROHM Semiconductor

500MA/-50V DIGITAL TRANSISTOR (W

0

Transistors - Bipolar (BJT) - Single, Pre-Biased

1. Overview

Pre-biased bipolar junction transistors (BJTs) are discrete semiconductor devices with integrated biasing resistors, designed to simplify circuit design and improve operational stability. Unlike standard BJTs requiring external biasing components, pre-biased BJTs incorporate internal resistors to set the base-emitter voltage and collector current. These devices are critical in modern electronics for applications demanding compact design, consistent performance, and reduced component count. Their ability to maintain stable operation under varying temperature and voltage conditions makes them essential in consumer electronics, industrial automation, and automotive systems.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN Pre-Biased BJTPositive bias resistor network, low-side switchingLogic-level switching, LED drivers
PNP Pre-Biased BJTNegative bias resistor network, high-side switchingPower supply control, relay drivers
Digital TransistorIntegrated resistors with ESD protectionDigital logic circuits, portable devices

3. Structure and Composition

Pre-biased BJTs consist of a silicon semiconductor die with three doped regions (emitter, base, collector) forming two p-n junctions. The key structural elements include: - Monolithic Resistor Network: Thin-film or diffused resistors embedded in the die for fixed biasing - Metal Contacts: Aluminum or copper layers for external connections - Encapsulation: Plastic or ceramic packaging with standard pinouts (e.g., SOT-23, TO-92) - Passivation Layer: Silicon dioxide/nitride coating to prevent surface contamination

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base currentDetermines amplification capability
Max Collector Voltage (VCEO)Max voltage across collector-emitterDefines operating voltage range
Transition Frequency (fT)Frequency response limitCritical for RF and switching applications
Power Dissipation (Ptot)Max thermal power handlingDictates thermal management needs
Built-in Resistor Ratio (R1/R2)Internal resistor division ratioControls bias point stability

5. Application Areas

Main industries and typical equipment: - Consumer Electronics: Mobile phone chargers, wearable devices - Industrial Automation: PLC modules, motor drivers - Automotive: Sensor interfaces, LED lighting systems - Telecommunications: Base station power amplifiers - Power Management: DC-DC converter switches

6. Leading Manufacturers and Products

ManufacturerKey ProductsFeatures
ON SemiconductorMMBT3904L200mA NPN transistor with 47k bias resistors
Toshiba2SB1958PNP device with built-in 10k /4.7k resistor network
STMicroelectronicsSM6T120NAutomotive-grade digital transistor with ESD protection

7. Selection Guidelines

Key considerations: - Match hFE with required amplification/saturation characteristics - Confirm VCEO rating exceeds circuit voltage requirements - Select resistor ratios for desired bias point (e.g., R1=10k , R2=22k for mid-range bias) - Prioritize thermal performance in high-power applications - Consider package type (SMD vs. through-hole) for PCB constraints

8. Industry Trends

Emerging trends include: - Miniaturization: Development of 0.4mm pitch WLCSP packages - Integrated protection: ESD/clamp diodes in standard designs - High-frequency variants: fT > 5GHz for 5G infrastructure - Automotive qualification: Increased demand for AEC-Q101 certified devices - Green manufacturing: Lead-free packaging and low-toxicity materials

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