Transistors - Bipolar (BJT) - Single, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
DTA123JCAHZGT116

DTA123JCAHZGT116

ROHM Semiconductor

PNP -100MA -50V DIGITAL TRANSIST

3000

DTA123YEBTL

DTA123YEBTL

ROHM Semiconductor

PNP -100MA -50V DIGITAL TRANSIST

2900

DTA144TCAT116

DTA144TCAT116

ROHM Semiconductor

DTA144TCA IS AN DIGITAL TRANSIST

3000

DTB114EKFRAT146

DTB114EKFRAT146

ROHM Semiconductor

DIGITAL TRANSISTOR (500MA/50V),

0

DTC114EEBMGTL

DTC114EEBMGTL

ROHM Semiconductor

TRANS NPN 100MA 50V SOT-416FL

0

DTC363TKT146

DTC363TKT146

ROHM Semiconductor

TRANS PREBIAS NPN 200MW SMT3

0

DTA114ESATP

DTA114ESATP

ROHM Semiconductor

TRANS PREBIAS PNP 300MW SPT

0

DTA113ZSATP

DTA113ZSATP

ROHM Semiconductor

TRANS PREBIAS PNP 300MW SPT

0

DTC114EBT2L

DTC114EBT2L

ROHM Semiconductor

TRANS PREBIAS NPN 150MW VMT3

0

DTA115EEBMGTL

DTA115EEBMGTL

ROHM Semiconductor

TRANS PNP 100MA 50V SOT-416FL

0

DTC114WSATP

DTC114WSATP

ROHM Semiconductor

TRANS PREBIAS NPN 300MW SPT

0

DTA143EEBMGTL

DTA143EEBMGTL

ROHM Semiconductor

TRANS PNP 100MA 50V SC-89

0

DTA114EEBMGTL

DTA114EEBMGTL

ROHM Semiconductor

TRANS PNP 100MA 50V SC-89

0

DTC144EEBMGTL

DTC144EEBMGTL

ROHM Semiconductor

TRANS NPN 100MA 50V SOT-416FL

0

DTA143EKAT246

DTA143EKAT246

ROHM Semiconductor

TRANS PREBIAS PNP 200MW SMT3

0

DTC143EEBMGTL

DTC143EEBMGTL

ROHM Semiconductor

TRANS NPN 100MA 50V SC-89

0

DTC143ESATP

DTC143ESATP

ROHM Semiconductor

TRANS PREBIAS NPN 300MW SPT

0

DTA143XEBMGTL

DTA143XEBMGTL

ROHM Semiconductor

TRANS PNP 100MA 50V SOT-416FL

0

DTC144TSATP

DTC144TSATP

ROHM Semiconductor

TRANS PREBIAS NPN 300MW SPT

0

DTC323TUT106

DTC323TUT106

ROHM Semiconductor

TRANS PREBIAS NPN 200MW UMT3

0

Transistors - Bipolar (BJT) - Single, Pre-Biased

1. Overview

Pre-biased bipolar junction transistors (BJTs) are discrete semiconductor devices with integrated biasing resistors, designed to simplify circuit design and improve operational stability. Unlike standard BJTs requiring external biasing components, pre-biased BJTs incorporate internal resistors to set the base-emitter voltage and collector current. These devices are critical in modern electronics for applications demanding compact design, consistent performance, and reduced component count. Their ability to maintain stable operation under varying temperature and voltage conditions makes them essential in consumer electronics, industrial automation, and automotive systems.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN Pre-Biased BJTPositive bias resistor network, low-side switchingLogic-level switching, LED drivers
PNP Pre-Biased BJTNegative bias resistor network, high-side switchingPower supply control, relay drivers
Digital TransistorIntegrated resistors with ESD protectionDigital logic circuits, portable devices

3. Structure and Composition

Pre-biased BJTs consist of a silicon semiconductor die with three doped regions (emitter, base, collector) forming two p-n junctions. The key structural elements include: - Monolithic Resistor Network: Thin-film or diffused resistors embedded in the die for fixed biasing - Metal Contacts: Aluminum or copper layers for external connections - Encapsulation: Plastic or ceramic packaging with standard pinouts (e.g., SOT-23, TO-92) - Passivation Layer: Silicon dioxide/nitride coating to prevent surface contamination

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base currentDetermines amplification capability
Max Collector Voltage (VCEO)Max voltage across collector-emitterDefines operating voltage range
Transition Frequency (fT)Frequency response limitCritical for RF and switching applications
Power Dissipation (Ptot)Max thermal power handlingDictates thermal management needs
Built-in Resistor Ratio (R1/R2)Internal resistor division ratioControls bias point stability

5. Application Areas

Main industries and typical equipment: - Consumer Electronics: Mobile phone chargers, wearable devices - Industrial Automation: PLC modules, motor drivers - Automotive: Sensor interfaces, LED lighting systems - Telecommunications: Base station power amplifiers - Power Management: DC-DC converter switches

6. Leading Manufacturers and Products

ManufacturerKey ProductsFeatures
ON SemiconductorMMBT3904L200mA NPN transistor with 47k bias resistors
Toshiba2SB1958PNP device with built-in 10k /4.7k resistor network
STMicroelectronicsSM6T120NAutomotive-grade digital transistor with ESD protection

7. Selection Guidelines

Key considerations: - Match hFE with required amplification/saturation characteristics - Confirm VCEO rating exceeds circuit voltage requirements - Select resistor ratios for desired bias point (e.g., R1=10k , R2=22k for mid-range bias) - Prioritize thermal performance in high-power applications - Consider package type (SMD vs. through-hole) for PCB constraints

8. Industry Trends

Emerging trends include: - Miniaturization: Development of 0.4mm pitch WLCSP packages - Integrated protection: ESD/clamp diodes in standard designs - High-frequency variants: fT > 5GHz for 5G infrastructure - Automotive qualification: Increased demand for AEC-Q101 certified devices - Green manufacturing: Lead-free packaging and low-toxicity materials

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