Transistors - Bipolar (BJT) - Single, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
DTA124TUAT106

DTA124TUAT106

ROHM Semiconductor

TRANS PREBIAS PNP 200MW UMT3

0

DTD122JKT146

DTD122JKT146

ROHM Semiconductor

TRANS PREBIAS NPN 200MW SMT3

0

DTA144EKAT146

DTA144EKAT146

ROHM Semiconductor

TRANS PREBIAS PNP 200MW SMT3

6011

DTC114EU3HZGT106

DTC114EU3HZGT106

ROHM Semiconductor

DTC114EU3HZG IS A DIGITAL TRANSI

5435

DTC114TUAT106

DTC114TUAT106

ROHM Semiconductor

TRANS PREBIAS NPN 200MW UMT3

709

EML20T2R

EML20T2R

ROHM Semiconductor

TRANS PREBIAS NPN 0.15W

0

DTA015TUBTL

DTA015TUBTL

ROHM Semiconductor

TRANS PREBIAS PNP 50V 0.2W UMT3F

3000

DTC124ECAHZGT116

DTC124ECAHZGT116

ROHM Semiconductor

NPN 100MA 50V DIGITAL TRANSISTOR

1652

DTA123YUAT106

DTA123YUAT106

ROHM Semiconductor

TRANS PREBIAS PNP 200MW UMT3

3241

DTC143ZKAT146

DTC143ZKAT146

ROHM Semiconductor

TRANS PREBIAS NPN 200MW SMT3

149798

DTB513ZMT2L

DTB513ZMT2L

ROHM Semiconductor

TRANS PREBIAS PNP 150MW VMT3

7975

DTA123ECAT116

DTA123ECAT116

ROHM Semiconductor

PNP -100MA -50V DIGITAL TRANSIST

2900

DTA123JCAT116

DTA123JCAT116

ROHM Semiconductor

PNP -100MA -50V DIGITAL TRANSIST

2785

DTA143ZCAT116

DTA143ZCAT116

ROHM Semiconductor

PNP -100MA -50V DIGITAL TRANSIST

2680

DTC143EEBTL

DTC143EEBTL

ROHM Semiconductor

TRANS PREBIAS NPN 150MW EMT3F

816

DTC014YUBTL

DTC014YUBTL

ROHM Semiconductor

TRANS PREBIAS NPN 50V 0.2W UMT3F

0

DTC144EU3T106

DTC144EU3T106

ROHM Semiconductor

NPN 100MA 50V DIGITAL TRANSISTOR

50

DTD743EMT2L

DTD743EMT2L

ROHM Semiconductor

TRANS PREBIAS NPN 150MW VMT3

3688

DTC144TMFHAT2L

DTC144TMFHAT2L

ROHM Semiconductor

NPN DIGITAL TRANSISTOR (CORRESPO

0

DTA144EMFHAT2L

DTA144EMFHAT2L

ROHM Semiconductor

DIGITAL TRANSISTOR PNP 50V 100MA

7989

Transistors - Bipolar (BJT) - Single, Pre-Biased

1. Overview

Pre-biased bipolar junction transistors (BJTs) are discrete semiconductor devices with integrated biasing resistors, designed to simplify circuit design and improve operational stability. Unlike standard BJTs requiring external biasing components, pre-biased BJTs incorporate internal resistors to set the base-emitter voltage and collector current. These devices are critical in modern electronics for applications demanding compact design, consistent performance, and reduced component count. Their ability to maintain stable operation under varying temperature and voltage conditions makes them essential in consumer electronics, industrial automation, and automotive systems.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN Pre-Biased BJTPositive bias resistor network, low-side switchingLogic-level switching, LED drivers
PNP Pre-Biased BJTNegative bias resistor network, high-side switchingPower supply control, relay drivers
Digital TransistorIntegrated resistors with ESD protectionDigital logic circuits, portable devices

3. Structure and Composition

Pre-biased BJTs consist of a silicon semiconductor die with three doped regions (emitter, base, collector) forming two p-n junctions. The key structural elements include: - Monolithic Resistor Network: Thin-film or diffused resistors embedded in the die for fixed biasing - Metal Contacts: Aluminum or copper layers for external connections - Encapsulation: Plastic or ceramic packaging with standard pinouts (e.g., SOT-23, TO-92) - Passivation Layer: Silicon dioxide/nitride coating to prevent surface contamination

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base currentDetermines amplification capability
Max Collector Voltage (VCEO)Max voltage across collector-emitterDefines operating voltage range
Transition Frequency (fT)Frequency response limitCritical for RF and switching applications
Power Dissipation (Ptot)Max thermal power handlingDictates thermal management needs
Built-in Resistor Ratio (R1/R2)Internal resistor division ratioControls bias point stability

5. Application Areas

Main industries and typical equipment: - Consumer Electronics: Mobile phone chargers, wearable devices - Industrial Automation: PLC modules, motor drivers - Automotive: Sensor interfaces, LED lighting systems - Telecommunications: Base station power amplifiers - Power Management: DC-DC converter switches

6. Leading Manufacturers and Products

ManufacturerKey ProductsFeatures
ON SemiconductorMMBT3904L200mA NPN transistor with 47k bias resistors
Toshiba2SB1958PNP device with built-in 10k /4.7k resistor network
STMicroelectronicsSM6T120NAutomotive-grade digital transistor with ESD protection

7. Selection Guidelines

Key considerations: - Match hFE with required amplification/saturation characteristics - Confirm VCEO rating exceeds circuit voltage requirements - Select resistor ratios for desired bias point (e.g., R1=10k , R2=22k for mid-range bias) - Prioritize thermal performance in high-power applications - Consider package type (SMD vs. through-hole) for PCB constraints

8. Industry Trends

Emerging trends include: - Miniaturization: Development of 0.4mm pitch WLCSP packages - Integrated protection: ESD/clamp diodes in standard designs - High-frequency variants: fT > 5GHz for 5G infrastructure - Automotive qualification: Increased demand for AEC-Q101 certified devices - Green manufacturing: Lead-free packaging and low-toxicity materials

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