Transistors - Bipolar (BJT) - Single, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
DTA114EUAT106

DTA114EUAT106

ROHM Semiconductor

TRANS PREBIAS PNP 200MW UMT3

29701

DTC144EUBHZGTL

DTC144EUBHZGTL

ROHM Semiconductor

NPN DIGITAL TRANSISTOR (WITH BUI

2801

DTC143XUAT106

DTC143XUAT106

ROHM Semiconductor

TRANS PREBIAS NPN 200MW UMT3

40

DTC144EUAT106

DTC144EUAT106

ROHM Semiconductor

TRANS PREBIAS NPN 200MW UMT3

3080

DTC144WKAT146

DTC144WKAT146

ROHM Semiconductor

TRANS PREBIAS NPN 200MW SMT3

817

DTA123YKAT146

DTA123YKAT146

ROHM Semiconductor

TRANS PREBIAS PNP 200MW SMT3

1264

DTC123EU3HZGT106

DTC123EU3HZGT106

ROHM Semiconductor

DTC123EU3 IS AN DIGITAL TRANSIST

3000

DTA113ZEFRATL

DTA113ZEFRATL

ROHM Semiconductor

PNP DIGITAL TRANSISTOR (AEC-Q101

3000

DTB123ECHZGT116

DTB123ECHZGT116

ROHM Semiconductor

-500MA/-50V DIGITAL TRANSISTOR (

2895

DTA014EMT2L

DTA014EMT2L

ROHM Semiconductor

TRANS PREBIAS PNP 50V VMT3

5325

DTA015EEBTL

DTA015EEBTL

ROHM Semiconductor

TRANS PREBIAS PNP 50V 0.15W SC89

0

DTC014TEBTL

DTC014TEBTL

ROHM Semiconductor

TRANS PREBIAS NPN 50V EMT3F

3620

DTA043EMT2L

DTA043EMT2L

ROHM Semiconductor

TRANS PREBIAS PNP 50V VMT3

7520

DTA143XEFRATL

DTA143XEFRATL

ROHM Semiconductor

PNP DIGITAL TRANSISTOR (WITH BUI

2970

DTC114TEBTL

DTC114TEBTL

ROHM Semiconductor

TRANS PREBIAS NPN 150MW EMT3F

890

DTA123JMFHAT2L

DTA123JMFHAT2L

ROHM Semiconductor

PNP DIGITAL TRANSISTOR (WITH BUI

8000

DTD143ECT216

DTD143ECT216

ROHM Semiconductor

TRANS PREBIAS NPN 200MW SST3

9968

DTA124XUAT106

DTA124XUAT106

ROHM Semiconductor

TRANS PREBIAS PNP 200MW UMT3

2198

DTC123JUBTL

DTC123JUBTL

ROHM Semiconductor

TRANS PREBIAS NPN 200MW UMT3F

6

DTC144VUAT106

DTC144VUAT106

ROHM Semiconductor

TRANS PREBIAS NPN 200MW UMT3

698

Transistors - Bipolar (BJT) - Single, Pre-Biased

1. Overview

Pre-biased bipolar junction transistors (BJTs) are discrete semiconductor devices with integrated biasing resistors, designed to simplify circuit design and improve operational stability. Unlike standard BJTs requiring external biasing components, pre-biased BJTs incorporate internal resistors to set the base-emitter voltage and collector current. These devices are critical in modern electronics for applications demanding compact design, consistent performance, and reduced component count. Their ability to maintain stable operation under varying temperature and voltage conditions makes them essential in consumer electronics, industrial automation, and automotive systems.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN Pre-Biased BJTPositive bias resistor network, low-side switchingLogic-level switching, LED drivers
PNP Pre-Biased BJTNegative bias resistor network, high-side switchingPower supply control, relay drivers
Digital TransistorIntegrated resistors with ESD protectionDigital logic circuits, portable devices

3. Structure and Composition

Pre-biased BJTs consist of a silicon semiconductor die with three doped regions (emitter, base, collector) forming two p-n junctions. The key structural elements include: - Monolithic Resistor Network: Thin-film or diffused resistors embedded in the die for fixed biasing - Metal Contacts: Aluminum or copper layers for external connections - Encapsulation: Plastic or ceramic packaging with standard pinouts (e.g., SOT-23, TO-92) - Passivation Layer: Silicon dioxide/nitride coating to prevent surface contamination

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base currentDetermines amplification capability
Max Collector Voltage (VCEO)Max voltage across collector-emitterDefines operating voltage range
Transition Frequency (fT)Frequency response limitCritical for RF and switching applications
Power Dissipation (Ptot)Max thermal power handlingDictates thermal management needs
Built-in Resistor Ratio (R1/R2)Internal resistor division ratioControls bias point stability

5. Application Areas

Main industries and typical equipment: - Consumer Electronics: Mobile phone chargers, wearable devices - Industrial Automation: PLC modules, motor drivers - Automotive: Sensor interfaces, LED lighting systems - Telecommunications: Base station power amplifiers - Power Management: DC-DC converter switches

6. Leading Manufacturers and Products

ManufacturerKey ProductsFeatures
ON SemiconductorMMBT3904L200mA NPN transistor with 47k bias resistors
Toshiba2SB1958PNP device with built-in 10k /4.7k resistor network
STMicroelectronicsSM6T120NAutomotive-grade digital transistor with ESD protection

7. Selection Guidelines

Key considerations: - Match hFE with required amplification/saturation characteristics - Confirm VCEO rating exceeds circuit voltage requirements - Select resistor ratios for desired bias point (e.g., R1=10k , R2=22k for mid-range bias) - Prioritize thermal performance in high-power applications - Consider package type (SMD vs. through-hole) for PCB constraints

8. Industry Trends

Emerging trends include: - Miniaturization: Development of 0.4mm pitch WLCSP packages - Integrated protection: ESD/clamp diodes in standard designs - High-frequency variants: fT > 5GHz for 5G infrastructure - Automotive qualification: Increased demand for AEC-Q101 certified devices - Green manufacturing: Lead-free packaging and low-toxicity materials

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