Transistors - Bipolar (BJT) - Single, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
DTA014YEBTL

DTA014YEBTL

ROHM Semiconductor

TRANS PREBIAS PNP 50V 0.15W SC89

245

DTC144TKAT146

DTC144TKAT146

ROHM Semiconductor

TRANS PREBIAS NPN 200MW SMT3

0

DTC124XMFHAT2L

DTC124XMFHAT2L

ROHM Semiconductor

NPN DIGITAL TRANSISTOR (CORRESPO

8000

DTC124XEBTL

DTC124XEBTL

ROHM Semiconductor

NPN 100MA 50V DIGITAL TRANSISTOR

2345

DTA125TKAT146

DTA125TKAT146

ROHM Semiconductor

TRANS PREBIAS PNP 0.2W SMT3

2991

DTB123TKT146

DTB123TKT146

ROHM Semiconductor

TRANS PREBIAS PNP 200MW SMT3

45

DTC115GUAT106

DTC115GUAT106

ROHM Semiconductor

TRANS PREBIAS NPN 200MW UMT3

515

DTA023YEBTL

DTA023YEBTL

ROHM Semiconductor

TRANS PREBIAS PNP 50V 0.15W SC89

17

DTA143TUBTL

DTA143TUBTL

ROHM Semiconductor

TRANS PREBIAS PNP 200MW UMT3

0

DTC143ZUAT106

DTC143ZUAT106

ROHM Semiconductor

TRANS PREBIAS NPN 200MW UMT3

2567

DTC114YU3HZGT106

DTC114YU3HZGT106

ROHM Semiconductor

DTC114YU3HZG IS AN DIGITAL TRANS

600

DTD113ZKT146

DTD113ZKT146

ROHM Semiconductor

TRANS PREBIAS NPN 200MW SMT3

51074

DTA024EMT2L

DTA024EMT2L

ROHM Semiconductor

TRANS PREBIAS PNP 50V VMT3

4725

DTC114EUBTL

DTC114EUBTL

ROHM Semiconductor

TRANS PREBIAS NPN 200MW UMT3F

2858

DTC143TEBTL

DTC143TEBTL

ROHM Semiconductor

TRANS PREBIAS NPN 150MW EMT3

3000

DTC123JUBHZGTL

DTC123JUBHZGTL

ROHM Semiconductor

NPN DIGITAL TRANSISTOR (WITH BUI

1960

DTC115GU3T106

DTC115GU3T106

ROHM Semiconductor

DTC115GU3 IS AN DIGITAL TRANSIST

3000

DTC143XCAHZGT116

DTC143XCAHZGT116

ROHM Semiconductor

NPN 100MA 50V DIGITAL TRANSISTOR

19249

DTA144EUAT106

DTA144EUAT106

ROHM Semiconductor

TRANS PREBIAS PNP 0.2W UMT3

850

DTD114GCT116

DTD114GCT116

ROHM Semiconductor

NPN 500MA/50V DIGITAL TRANSISTOR

2140

Transistors - Bipolar (BJT) - Single, Pre-Biased

1. Overview

Pre-biased bipolar junction transistors (BJTs) are discrete semiconductor devices with integrated biasing resistors, designed to simplify circuit design and improve operational stability. Unlike standard BJTs requiring external biasing components, pre-biased BJTs incorporate internal resistors to set the base-emitter voltage and collector current. These devices are critical in modern electronics for applications demanding compact design, consistent performance, and reduced component count. Their ability to maintain stable operation under varying temperature and voltage conditions makes them essential in consumer electronics, industrial automation, and automotive systems.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN Pre-Biased BJTPositive bias resistor network, low-side switchingLogic-level switching, LED drivers
PNP Pre-Biased BJTNegative bias resistor network, high-side switchingPower supply control, relay drivers
Digital TransistorIntegrated resistors with ESD protectionDigital logic circuits, portable devices

3. Structure and Composition

Pre-biased BJTs consist of a silicon semiconductor die with three doped regions (emitter, base, collector) forming two p-n junctions. The key structural elements include: - Monolithic Resistor Network: Thin-film or diffused resistors embedded in the die for fixed biasing - Metal Contacts: Aluminum or copper layers for external connections - Encapsulation: Plastic or ceramic packaging with standard pinouts (e.g., SOT-23, TO-92) - Passivation Layer: Silicon dioxide/nitride coating to prevent surface contamination

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base currentDetermines amplification capability
Max Collector Voltage (VCEO)Max voltage across collector-emitterDefines operating voltage range
Transition Frequency (fT)Frequency response limitCritical for RF and switching applications
Power Dissipation (Ptot)Max thermal power handlingDictates thermal management needs
Built-in Resistor Ratio (R1/R2)Internal resistor division ratioControls bias point stability

5. Application Areas

Main industries and typical equipment: - Consumer Electronics: Mobile phone chargers, wearable devices - Industrial Automation: PLC modules, motor drivers - Automotive: Sensor interfaces, LED lighting systems - Telecommunications: Base station power amplifiers - Power Management: DC-DC converter switches

6. Leading Manufacturers and Products

ManufacturerKey ProductsFeatures
ON SemiconductorMMBT3904L200mA NPN transistor with 47k bias resistors
Toshiba2SB1958PNP device with built-in 10k /4.7k resistor network
STMicroelectronicsSM6T120NAutomotive-grade digital transistor with ESD protection

7. Selection Guidelines

Key considerations: - Match hFE with required amplification/saturation characteristics - Confirm VCEO rating exceeds circuit voltage requirements - Select resistor ratios for desired bias point (e.g., R1=10k , R2=22k for mid-range bias) - Prioritize thermal performance in high-power applications - Consider package type (SMD vs. through-hole) for PCB constraints

8. Industry Trends

Emerging trends include: - Miniaturization: Development of 0.4mm pitch WLCSP packages - Integrated protection: ESD/clamp diodes in standard designs - High-frequency variants: fT > 5GHz for 5G infrastructure - Automotive qualification: Increased demand for AEC-Q101 certified devices - Green manufacturing: Lead-free packaging and low-toxicity materials

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