Transistors - Bipolar (BJT) - Single, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
DTC123EEBTL

DTC123EEBTL

ROHM Semiconductor

NPN 100MA 50V DIGITAL TRANSISTOR

1858

DTC614TUT106

DTC614TUT106

ROHM Semiconductor

TRANS PREBIAS NPN 200MW UMT3

336

DTC123JKAT146

DTC123JKAT146

ROHM Semiconductor

TRANS PREBIAS NPN 200MW SMT3

136171

DTA114EU3T106

DTA114EU3T106

ROHM Semiconductor

PNP -100MA -50V DIGITAL TRANSIST

1563

DTB143TKT146

DTB143TKT146

ROHM Semiconductor

TRANS PREBIAS PNP 200MW SMT3

0

DTA014YMT2L

DTA014YMT2L

ROHM Semiconductor

TRANS PREBIAS PNP 50V VMT3

5812

DTA114TU3HZGT106

DTA114TU3HZGT106

ROHM Semiconductor

DTA114TU3HZG IS AN DIGITAL TRANS

2975

DTC123JMFHAT2L

DTC123JMFHAT2L

ROHM Semiconductor

NPN DIGITAL TRANSISTOR (AEC-Q101

7688

DTA123JUBHZGTL

DTA123JUBHZGTL

ROHM Semiconductor

PNP DIGITAL TRANSISTOR (WITH BUI

2980

DTC124EU3HZGT106

DTC124EU3HZGT106

ROHM Semiconductor

DTC124EU3HZG IS AN DIGITAL TRANS

0

DTA115EMT2L

DTA115EMT2L

ROHM Semiconductor

TRANS PREBIAS PNP 150MW VMT3

0

DTC014TMT2L

DTC014TMT2L

ROHM Semiconductor

TRANS PREBIAS NPN 50V VMT3

2028

DTA114TEBTL

DTA114TEBTL

ROHM Semiconductor

TRANS PREBIAS PNP 150MW EMT3

0

DTDG14GPT100

DTDG14GPT100

ROHM Semiconductor

TRANS PREBIAS NPN 2W MPT3

2000

DTD123TCT116

DTD123TCT116

ROHM Semiconductor

NPN 500MA/50V DIGITAL TRANSISTOR

2113

DTC124EUAT106

DTC124EUAT106

ROHM Semiconductor

TRANS PREBIAS NPN 200MW UMT3

6680

DTA113ZETL

DTA113ZETL

ROHM Semiconductor

TRANS PREBIAS PNP 150MW EMT3

2787

DTC144GKAT146

DTC144GKAT146

ROHM Semiconductor

TRANS PREBIAS NPN 200MW SMT3

2985

DTA143TEBTL

DTA143TEBTL

ROHM Semiconductor

TRANS PREBIAS PNP 150MW EMT3

0

DTC013ZUBTL

DTC013ZUBTL

ROHM Semiconductor

TRANS PREBIAS NPN 0.2W UMT3F

2430

Transistors - Bipolar (BJT) - Single, Pre-Biased

1. Overview

Pre-biased bipolar junction transistors (BJTs) are discrete semiconductor devices with integrated biasing resistors, designed to simplify circuit design and improve operational stability. Unlike standard BJTs requiring external biasing components, pre-biased BJTs incorporate internal resistors to set the base-emitter voltage and collector current. These devices are critical in modern electronics for applications demanding compact design, consistent performance, and reduced component count. Their ability to maintain stable operation under varying temperature and voltage conditions makes them essential in consumer electronics, industrial automation, and automotive systems.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN Pre-Biased BJTPositive bias resistor network, low-side switchingLogic-level switching, LED drivers
PNP Pre-Biased BJTNegative bias resistor network, high-side switchingPower supply control, relay drivers
Digital TransistorIntegrated resistors with ESD protectionDigital logic circuits, portable devices

3. Structure and Composition

Pre-biased BJTs consist of a silicon semiconductor die with three doped regions (emitter, base, collector) forming two p-n junctions. The key structural elements include: - Monolithic Resistor Network: Thin-film or diffused resistors embedded in the die for fixed biasing - Metal Contacts: Aluminum or copper layers for external connections - Encapsulation: Plastic or ceramic packaging with standard pinouts (e.g., SOT-23, TO-92) - Passivation Layer: Silicon dioxide/nitride coating to prevent surface contamination

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base currentDetermines amplification capability
Max Collector Voltage (VCEO)Max voltage across collector-emitterDefines operating voltage range
Transition Frequency (fT)Frequency response limitCritical for RF and switching applications
Power Dissipation (Ptot)Max thermal power handlingDictates thermal management needs
Built-in Resistor Ratio (R1/R2)Internal resistor division ratioControls bias point stability

5. Application Areas

Main industries and typical equipment: - Consumer Electronics: Mobile phone chargers, wearable devices - Industrial Automation: PLC modules, motor drivers - Automotive: Sensor interfaces, LED lighting systems - Telecommunications: Base station power amplifiers - Power Management: DC-DC converter switches

6. Leading Manufacturers and Products

ManufacturerKey ProductsFeatures
ON SemiconductorMMBT3904L200mA NPN transistor with 47k bias resistors
Toshiba2SB1958PNP device with built-in 10k /4.7k resistor network
STMicroelectronicsSM6T120NAutomotive-grade digital transistor with ESD protection

7. Selection Guidelines

Key considerations: - Match hFE with required amplification/saturation characteristics - Confirm VCEO rating exceeds circuit voltage requirements - Select resistor ratios for desired bias point (e.g., R1=10k , R2=22k for mid-range bias) - Prioritize thermal performance in high-power applications - Consider package type (SMD vs. through-hole) for PCB constraints

8. Industry Trends

Emerging trends include: - Miniaturization: Development of 0.4mm pitch WLCSP packages - Integrated protection: ESD/clamp diodes in standard designs - High-frequency variants: fT > 5GHz for 5G infrastructure - Automotive qualification: Increased demand for AEC-Q101 certified devices - Green manufacturing: Lead-free packaging and low-toxicity materials

RFQ BOM Call Skype Email
Top