Transistors - Bipolar (BJT) - Single, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
DTB543XMT2L

DTB543XMT2L

ROHM Semiconductor

TRANS PREBIAS PNP 150MW VMT3

0

DTA143EU3HZGT106

DTA143EU3HZGT106

ROHM Semiconductor

DTA143EU3HZG IS A DIGITAL TRANSI

2715

DTD543ZMT2L

DTD543ZMT2L

ROHM Semiconductor

TRANS PREBIAS NPN 150MW VMT3

0

DTC124XETL

DTC124XETL

ROHM Semiconductor

TRANS PREBIAS NPN 150MW EMT3

8152

DTA144VKAT146

DTA144VKAT146

ROHM Semiconductor

TRANS PREBIAS PNP 200MW SMT3

0

DTC623TUT106

DTC623TUT106

ROHM Semiconductor

TRANS PREBIAS NPN 200MW UMT3

3905

DTC115EETL

DTC115EETL

ROHM Semiconductor

TRANS PREBIAS NPN 150MW EMT3

130

DTC914TUBTL

DTC914TUBTL

ROHM Semiconductor

TRANS PREBIAS NPN 20V 0.2W UMT3F

2940

DTA143XKAT146

DTA143XKAT146

ROHM Semiconductor

TRANS PREBIAS PNP 200MW SMT3

67

DTA143EUBHZGTL

DTA143EUBHZGTL

ROHM Semiconductor

PNP DIGITAL TRANSISTOR (WITH BUI

5400

DTC123YEBHZGTL

DTC123YEBHZGTL

ROHM Semiconductor

DTC123YEBHZG IS A TRANSISTOR WIT

95

DTC144EUBTL

DTC144EUBTL

ROHM Semiconductor

TRANS PREBIAS NPN 200MW UMT3F

1286

DTC143ECAT116

DTC143ECAT116

ROHM Semiconductor

NPN 100MA 50V DIGITAL TRANSISTOR

1489

DTA143ZUAT106

DTA143ZUAT106

ROHM Semiconductor

TRANS PREBIAS PNP 200MW UMT3

55

DTD743ZMT2L

DTD743ZMT2L

ROHM Semiconductor

TRANS PREBIAS NPN 150MW VMT3

0

DTA113TKAT146

DTA113TKAT146

ROHM Semiconductor

TRANS PREBIAS PNP 200MW SMT3

7858

DTC115EUAT106

DTC115EUAT106

ROHM Semiconductor

TRANS PREBIAS NPN 200MW UMT3

3855

DTA114YUAT106

DTA114YUAT106

ROHM Semiconductor

TRANS PREBIAS PNP 200MW UMT3

489

DTC043EEBTL

DTC043EEBTL

ROHM Semiconductor

TRANS PREBIAS NPN 50V EMT3F

0

DTC014EEBTL

DTC014EEBTL

ROHM Semiconductor

TRANS PREBIAS NPN 50V 0.15W SC89

0

Transistors - Bipolar (BJT) - Single, Pre-Biased

1. Overview

Pre-biased bipolar junction transistors (BJTs) are discrete semiconductor devices with integrated biasing resistors, designed to simplify circuit design and improve operational stability. Unlike standard BJTs requiring external biasing components, pre-biased BJTs incorporate internal resistors to set the base-emitter voltage and collector current. These devices are critical in modern electronics for applications demanding compact design, consistent performance, and reduced component count. Their ability to maintain stable operation under varying temperature and voltage conditions makes them essential in consumer electronics, industrial automation, and automotive systems.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN Pre-Biased BJTPositive bias resistor network, low-side switchingLogic-level switching, LED drivers
PNP Pre-Biased BJTNegative bias resistor network, high-side switchingPower supply control, relay drivers
Digital TransistorIntegrated resistors with ESD protectionDigital logic circuits, portable devices

3. Structure and Composition

Pre-biased BJTs consist of a silicon semiconductor die with three doped regions (emitter, base, collector) forming two p-n junctions. The key structural elements include: - Monolithic Resistor Network: Thin-film or diffused resistors embedded in the die for fixed biasing - Metal Contacts: Aluminum or copper layers for external connections - Encapsulation: Plastic or ceramic packaging with standard pinouts (e.g., SOT-23, TO-92) - Passivation Layer: Silicon dioxide/nitride coating to prevent surface contamination

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base currentDetermines amplification capability
Max Collector Voltage (VCEO)Max voltage across collector-emitterDefines operating voltage range
Transition Frequency (fT)Frequency response limitCritical for RF and switching applications
Power Dissipation (Ptot)Max thermal power handlingDictates thermal management needs
Built-in Resistor Ratio (R1/R2)Internal resistor division ratioControls bias point stability

5. Application Areas

Main industries and typical equipment: - Consumer Electronics: Mobile phone chargers, wearable devices - Industrial Automation: PLC modules, motor drivers - Automotive: Sensor interfaces, LED lighting systems - Telecommunications: Base station power amplifiers - Power Management: DC-DC converter switches

6. Leading Manufacturers and Products

ManufacturerKey ProductsFeatures
ON SemiconductorMMBT3904L200mA NPN transistor with 47k bias resistors
Toshiba2SB1958PNP device with built-in 10k /4.7k resistor network
STMicroelectronicsSM6T120NAutomotive-grade digital transistor with ESD protection

7. Selection Guidelines

Key considerations: - Match hFE with required amplification/saturation characteristics - Confirm VCEO rating exceeds circuit voltage requirements - Select resistor ratios for desired bias point (e.g., R1=10k , R2=22k for mid-range bias) - Prioritize thermal performance in high-power applications - Consider package type (SMD vs. through-hole) for PCB constraints

8. Industry Trends

Emerging trends include: - Miniaturization: Development of 0.4mm pitch WLCSP packages - Integrated protection: ESD/clamp diodes in standard designs - High-frequency variants: fT > 5GHz for 5G infrastructure - Automotive qualification: Increased demand for AEC-Q101 certified devices - Green manufacturing: Lead-free packaging and low-toxicity materials

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