Transistors - Bipolar (BJT) - Single, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
DTB143ECT216

DTB143ECT216

ROHM Semiconductor

TRANS PREBIAS PNP 500MA SC59

0

DTB723YMT2L

DTB723YMT2L

ROHM Semiconductor

TRANS PREBIAS PNP 150MW VMT3

0

DTD143ECHZGT116

DTD143ECHZGT116

ROHM Semiconductor

500MA/50V DIGITAL TRANSISTOR (WI

3336

DTC124EU3T106

DTC124EU3T106

ROHM Semiconductor

NPN 100MA 50V DIGITAL TRANSISTOR

920

DTC043ZMT2L

DTC043ZMT2L

ROHM Semiconductor

TRANS PREBIAS NPN 50V 100MA VMT3

234

DTC123ECAT116

DTC123ECAT116

ROHM Semiconductor

NPN 100MA 50V DIGITAL TRANSISTOR

4892

DTA023EMT2L

DTA023EMT2L

ROHM Semiconductor

TRANS PREBIAS PNP 50V VMT3

7099

DTC113ZCAT116

DTC113ZCAT116

ROHM Semiconductor

NPN 100MA 50V DIGITAL TRANSISTOR

2987

DTA113ZU3HZGT106

DTA113ZU3HZGT106

ROHM Semiconductor

DTA113ZU3HZG IS AN DIGITAL TRANS

843

DTA143TU3T106

DTA143TU3T106

ROHM Semiconductor

DTA143TU3 IS AN DIGITAL TRANSIST

2980

DTA143ZMT2L

DTA143ZMT2L

ROHM Semiconductor

TRANS PREBIAS PNP 150MW VMT3

12745

DTC043XEBTL

DTC043XEBTL

ROHM Semiconductor

NPN DIGITAL TRANSISTOR (WITH BUI

100240

DTA143XUBTL

DTA143XUBTL

ROHM Semiconductor

TRANS PREBIAS PNP 200MW UMT3F

4748

DTC144GUAT106

DTC144GUAT106

ROHM Semiconductor

TRANS PREBIAS NPN 200MW UMT3

2609

DTA114EU3HZGT106

DTA114EU3HZGT106

ROHM Semiconductor

DTA114EU3HZG IS A DIGITAL TRANSI

184

DTC114EU3T106

DTC114EU3T106

ROHM Semiconductor

NPN 100MA 50V DIGITAL TRANSISTOR

0

DTD123YCHZGT116

DTD123YCHZGT116

ROHM Semiconductor

DTD123YCHZG IS THE HIGH RELIABIL

3030

DTC124XMT2L

DTC124XMT2L

ROHM Semiconductor

TRANS PREBIAS NPN 150MW VMT3

18618

DTB114GCT116

DTB114GCT116

ROHM Semiconductor

PNP -500MA/-50V DIGITAL TRANSIST

6000

DTA143TCAT116

DTA143TCAT116

ROHM Semiconductor

PNP -100MA -50V DIGITAL TRANSIST

3000

Transistors - Bipolar (BJT) - Single, Pre-Biased

1. Overview

Pre-biased bipolar junction transistors (BJTs) are discrete semiconductor devices with integrated biasing resistors, designed to simplify circuit design and improve operational stability. Unlike standard BJTs requiring external biasing components, pre-biased BJTs incorporate internal resistors to set the base-emitter voltage and collector current. These devices are critical in modern electronics for applications demanding compact design, consistent performance, and reduced component count. Their ability to maintain stable operation under varying temperature and voltage conditions makes them essential in consumer electronics, industrial automation, and automotive systems.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN Pre-Biased BJTPositive bias resistor network, low-side switchingLogic-level switching, LED drivers
PNP Pre-Biased BJTNegative bias resistor network, high-side switchingPower supply control, relay drivers
Digital TransistorIntegrated resistors with ESD protectionDigital logic circuits, portable devices

3. Structure and Composition

Pre-biased BJTs consist of a silicon semiconductor die with three doped regions (emitter, base, collector) forming two p-n junctions. The key structural elements include: - Monolithic Resistor Network: Thin-film or diffused resistors embedded in the die for fixed biasing - Metal Contacts: Aluminum or copper layers for external connections - Encapsulation: Plastic or ceramic packaging with standard pinouts (e.g., SOT-23, TO-92) - Passivation Layer: Silicon dioxide/nitride coating to prevent surface contamination

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base currentDetermines amplification capability
Max Collector Voltage (VCEO)Max voltage across collector-emitterDefines operating voltage range
Transition Frequency (fT)Frequency response limitCritical for RF and switching applications
Power Dissipation (Ptot)Max thermal power handlingDictates thermal management needs
Built-in Resistor Ratio (R1/R2)Internal resistor division ratioControls bias point stability

5. Application Areas

Main industries and typical equipment: - Consumer Electronics: Mobile phone chargers, wearable devices - Industrial Automation: PLC modules, motor drivers - Automotive: Sensor interfaces, LED lighting systems - Telecommunications: Base station power amplifiers - Power Management: DC-DC converter switches

6. Leading Manufacturers and Products

ManufacturerKey ProductsFeatures
ON SemiconductorMMBT3904L200mA NPN transistor with 47k bias resistors
Toshiba2SB1958PNP device with built-in 10k /4.7k resistor network
STMicroelectronicsSM6T120NAutomotive-grade digital transistor with ESD protection

7. Selection Guidelines

Key considerations: - Match hFE with required amplification/saturation characteristics - Confirm VCEO rating exceeds circuit voltage requirements - Select resistor ratios for desired bias point (e.g., R1=10k , R2=22k for mid-range bias) - Prioritize thermal performance in high-power applications - Consider package type (SMD vs. through-hole) for PCB constraints

8. Industry Trends

Emerging trends include: - Miniaturization: Development of 0.4mm pitch WLCSP packages - Integrated protection: ESD/clamp diodes in standard designs - High-frequency variants: fT > 5GHz for 5G infrastructure - Automotive qualification: Increased demand for AEC-Q101 certified devices - Green manufacturing: Lead-free packaging and low-toxicity materials

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