Transistors - Bipolar (BJT) - Single, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
DTC014TUBTL

DTC014TUBTL

ROHM Semiconductor

TRANS PREBIAS NPN 50V UMT3F

40

DTB743ZMT2L

DTB743ZMT2L

ROHM Semiconductor

TRANS PREBIAS PNP 150MW VMT3

0

DTC113ZU3HZGT106

DTC113ZU3HZGT106

ROHM Semiconductor

DTC113ZU3HZG IS AN DIGITAL TRANS

2815

DTD113ZCHZGT116

DTD113ZCHZGT116

ROHM Semiconductor

500MA/50V DIGITAL TRANSISTOR (WI

31484

DTA123JKAT146

DTA123JKAT146

ROHM Semiconductor

TRANS PREBIAS PNP 200MW SMT3

5

DTA143ZU3HZGT106

DTA143ZU3HZGT106

ROHM Semiconductor

DTA143ZU3HZG IS A DIGITAL TRANSI

2285

DTC114YCAT116

DTC114YCAT116

ROHM Semiconductor

NPN 100MA 50V DIGITAL TRANSISTOR

6278

DTC124TETL

DTC124TETL

ROHM Semiconductor

TRANS PREBIAS NPN 150MW EMT3

1834

DTA143ECAHZGT116

DTA143ECAHZGT116

ROHM Semiconductor

PNP -100MA -50V DIGITAL TRANSIST

2595

DTC115EU3T106

DTC115EU3T106

ROHM Semiconductor

DTC115EU3 IS AN DIGITAL TRANSIST

1197

DTA123EEFRATL

DTA123EEFRATL

ROHM Semiconductor

PNP DIGITAL TRANSISTOR (CORRESPO

3000

DTA124XETL

DTA124XETL

ROHM Semiconductor

TRANS PREBIAS PNP 150MW EMT3

2120

DTC014EUBTL

DTC014EUBTL

ROHM Semiconductor

TRANS PREBIAS NPN 50V 0.2W UMT3F

412

DTD123YCT116

DTD123YCT116

ROHM Semiconductor

NPN 500MA/50V DIGITAL TRANSISTOR

1860

DTA144WKAT146

DTA144WKAT146

ROHM Semiconductor

TRANS PREBIAS PNP 200MW SMT3

2650

DTC123YCAHZGT116

DTC123YCAHZGT116

ROHM Semiconductor

NPN 100MA 50V DIGITAL TRANSISTOR

2743

DTC143EMT2L

DTC143EMT2L

ROHM Semiconductor

TRANS PREBIAS NPN 150MW VMT3

1314

DTC343TKT146

DTC343TKT146

ROHM Semiconductor

TRANS PREBIAS NPN 200MW SMT3

3256

DTC114EUAT106

DTC114EUAT106

ROHM Semiconductor

TRANS PREBIAS NPN 200MW UMT3

23613

DTA124XU3T106

DTA124XU3T106

ROHM Semiconductor

DTA124XU3 IS AN DIGITAL TRANSIST

2980

Transistors - Bipolar (BJT) - Single, Pre-Biased

1. Overview

Pre-biased bipolar junction transistors (BJTs) are discrete semiconductor devices with integrated biasing resistors, designed to simplify circuit design and improve operational stability. Unlike standard BJTs requiring external biasing components, pre-biased BJTs incorporate internal resistors to set the base-emitter voltage and collector current. These devices are critical in modern electronics for applications demanding compact design, consistent performance, and reduced component count. Their ability to maintain stable operation under varying temperature and voltage conditions makes them essential in consumer electronics, industrial automation, and automotive systems.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN Pre-Biased BJTPositive bias resistor network, low-side switchingLogic-level switching, LED drivers
PNP Pre-Biased BJTNegative bias resistor network, high-side switchingPower supply control, relay drivers
Digital TransistorIntegrated resistors with ESD protectionDigital logic circuits, portable devices

3. Structure and Composition

Pre-biased BJTs consist of a silicon semiconductor die with three doped regions (emitter, base, collector) forming two p-n junctions. The key structural elements include: - Monolithic Resistor Network: Thin-film or diffused resistors embedded in the die for fixed biasing - Metal Contacts: Aluminum or copper layers for external connections - Encapsulation: Plastic or ceramic packaging with standard pinouts (e.g., SOT-23, TO-92) - Passivation Layer: Silicon dioxide/nitride coating to prevent surface contamination

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base currentDetermines amplification capability
Max Collector Voltage (VCEO)Max voltage across collector-emitterDefines operating voltage range
Transition Frequency (fT)Frequency response limitCritical for RF and switching applications
Power Dissipation (Ptot)Max thermal power handlingDictates thermal management needs
Built-in Resistor Ratio (R1/R2)Internal resistor division ratioControls bias point stability

5. Application Areas

Main industries and typical equipment: - Consumer Electronics: Mobile phone chargers, wearable devices - Industrial Automation: PLC modules, motor drivers - Automotive: Sensor interfaces, LED lighting systems - Telecommunications: Base station power amplifiers - Power Management: DC-DC converter switches

6. Leading Manufacturers and Products

ManufacturerKey ProductsFeatures
ON SemiconductorMMBT3904L200mA NPN transistor with 47k bias resistors
Toshiba2SB1958PNP device with built-in 10k /4.7k resistor network
STMicroelectronicsSM6T120NAutomotive-grade digital transistor with ESD protection

7. Selection Guidelines

Key considerations: - Match hFE with required amplification/saturation characteristics - Confirm VCEO rating exceeds circuit voltage requirements - Select resistor ratios for desired bias point (e.g., R1=10k , R2=22k for mid-range bias) - Prioritize thermal performance in high-power applications - Consider package type (SMD vs. through-hole) for PCB constraints

8. Industry Trends

Emerging trends include: - Miniaturization: Development of 0.4mm pitch WLCSP packages - Integrated protection: ESD/clamp diodes in standard designs - High-frequency variants: fT > 5GHz for 5G infrastructure - Automotive qualification: Increased demand for AEC-Q101 certified devices - Green manufacturing: Lead-free packaging and low-toxicity materials

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