Transistors - Bipolar (BJT) - Single, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
DTA124EKAT146

DTA124EKAT146

ROHM Semiconductor

TRANS PREBIAS PNP 200MW SMT3

22

DTA023EUBTL

DTA023EUBTL

ROHM Semiconductor

TRANS PREBIAS PNP 50V 0.2W UMT3F

1675

DTC043ZUBTL

DTC043ZUBTL

ROHM Semiconductor

TRANS PREBIAS NPN 50V UMT3F

14700

DTC124EUBHZGTL

DTC124EUBHZGTL

ROHM Semiconductor

NPN 100MA 50V DIGITAL TRANSISTOR

2750

DTA143EKAT146

DTA143EKAT146

ROHM Semiconductor

TRANS PREBIAS PNP 200MW SMT3

10019

DTDG23YPT100

DTDG23YPT100

ROHM Semiconductor

TRANS PREBIAS NPN 1.5W MPT3

2

DTC143ECAHZGT116

DTC143ECAHZGT116

ROHM Semiconductor

NPN 100MA 50V DIGITAL TRANSISTOR

2011

DTA143ZEBHZGTL

DTA143ZEBHZGTL

ROHM Semiconductor

PNP DIGITAL TRANSISTOR (WITH BUI

996

DTA014EUBTL

DTA014EUBTL

ROHM Semiconductor

TRANS PREBIAS PNP 50V 0.2W UMT3F

191

DTC113ZEBTL

DTC113ZEBTL

ROHM Semiconductor

NPN 100MA 50V DIGITAL TRANSISTOR

2544

DTC015TEBTL

DTC015TEBTL

ROHM Semiconductor

TRANS PREBIAS NPN 50V EMT3F

0

DTA123YCAHZGT116

DTA123YCAHZGT116

ROHM Semiconductor

PNP -100MA -50V DIGITAL TRANSIST

1755

DTA114YMFHAT2L

DTA114YMFHAT2L

ROHM Semiconductor

PNP DIGITAL TRANSISTOR (CORRESPO

5995

DTA014EEBTL

DTA014EEBTL

ROHM Semiconductor

TRANS PREBIAS PNP 50V 0.15W SC89

66

DTA115EETL

DTA115EETL

ROHM Semiconductor

TRANS PREBIAS PNP 150MW EMT3

261

DTC123TKAT146

DTC123TKAT146

ROHM Semiconductor

TRANS PREBIAS NPN 200MW SMT3

2979

DTA113ZEBTL

DTA113ZEBTL

ROHM Semiconductor

PNP -100MA -50V DIGITAL TRANSIST

3000

DTC014YMT2L

DTC014YMT2L

ROHM Semiconductor

TRANS PREBIAS NPN 50V VMT3

47860

DTA113ZU3T106

DTA113ZU3T106

ROHM Semiconductor

DTA113ZU3 IS AN DIGITAL TRANSIST

970

DTB114EKT146

DTB114EKT146

ROHM Semiconductor

TRANS PREBIAS PNP 200MW SMT3

0

Transistors - Bipolar (BJT) - Single, Pre-Biased

1. Overview

Pre-biased bipolar junction transistors (BJTs) are discrete semiconductor devices with integrated biasing resistors, designed to simplify circuit design and improve operational stability. Unlike standard BJTs requiring external biasing components, pre-biased BJTs incorporate internal resistors to set the base-emitter voltage and collector current. These devices are critical in modern electronics for applications demanding compact design, consistent performance, and reduced component count. Their ability to maintain stable operation under varying temperature and voltage conditions makes them essential in consumer electronics, industrial automation, and automotive systems.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN Pre-Biased BJTPositive bias resistor network, low-side switchingLogic-level switching, LED drivers
PNP Pre-Biased BJTNegative bias resistor network, high-side switchingPower supply control, relay drivers
Digital TransistorIntegrated resistors with ESD protectionDigital logic circuits, portable devices

3. Structure and Composition

Pre-biased BJTs consist of a silicon semiconductor die with three doped regions (emitter, base, collector) forming two p-n junctions. The key structural elements include: - Monolithic Resistor Network: Thin-film or diffused resistors embedded in the die for fixed biasing - Metal Contacts: Aluminum or copper layers for external connections - Encapsulation: Plastic or ceramic packaging with standard pinouts (e.g., SOT-23, TO-92) - Passivation Layer: Silicon dioxide/nitride coating to prevent surface contamination

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base currentDetermines amplification capability
Max Collector Voltage (VCEO)Max voltage across collector-emitterDefines operating voltage range
Transition Frequency (fT)Frequency response limitCritical for RF and switching applications
Power Dissipation (Ptot)Max thermal power handlingDictates thermal management needs
Built-in Resistor Ratio (R1/R2)Internal resistor division ratioControls bias point stability

5. Application Areas

Main industries and typical equipment: - Consumer Electronics: Mobile phone chargers, wearable devices - Industrial Automation: PLC modules, motor drivers - Automotive: Sensor interfaces, LED lighting systems - Telecommunications: Base station power amplifiers - Power Management: DC-DC converter switches

6. Leading Manufacturers and Products

ManufacturerKey ProductsFeatures
ON SemiconductorMMBT3904L200mA NPN transistor with 47k bias resistors
Toshiba2SB1958PNP device with built-in 10k /4.7k resistor network
STMicroelectronicsSM6T120NAutomotive-grade digital transistor with ESD protection

7. Selection Guidelines

Key considerations: - Match hFE with required amplification/saturation characteristics - Confirm VCEO rating exceeds circuit voltage requirements - Select resistor ratios for desired bias point (e.g., R1=10k , R2=22k for mid-range bias) - Prioritize thermal performance in high-power applications - Consider package type (SMD vs. through-hole) for PCB constraints

8. Industry Trends

Emerging trends include: - Miniaturization: Development of 0.4mm pitch WLCSP packages - Integrated protection: ESD/clamp diodes in standard designs - High-frequency variants: fT > 5GHz for 5G infrastructure - Automotive qualification: Increased demand for AEC-Q101 certified devices - Green manufacturing: Lead-free packaging and low-toxicity materials

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