Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BCP53H,115

BCP53H,115

Nexperia

SMALL SIGNAL BIPOLAR TRANSISTOR

8000

BC807-40LWF

BC807-40LWF

Nexperia

TRANS PNP 45V 0.5A SOT323

0

2PA1576Q,135

2PA1576Q,135

Nexperia

TRANS PNP 50V 0.15A SOT323

0

PBSS5250X,115

PBSS5250X,115

Nexperia

TRANS PNP 50V 2A SOT89

976

BCW72,215

BCW72,215

Nexperia

TRANS NPN 45V 100MA TO236AB

799

BC807-40LVL

BC807-40LVL

Nexperia

BC807-40L/SOT23/TO-236AB

0

BCP51-10TF

BCP51-10TF

Nexperia

BCP51-10T/SOT223/SC-73

0

BC55-16PA,115

BC55-16PA,115

Nexperia

TRANS NPN 60V 1A 3HUSON

5603

PBSS4240ZX

PBSS4240ZX

Nexperia

TRANS NPN 40V 2A SOT223

0

BC856,215

BC856,215

Nexperia

TRANS PNP 65V 0.1A SOT23

10534

BF820W,115

BF820W,115

Nexperia

TRANS NPN 300V 50MA SOT323

2014

PDTA114EU/ZL115

PDTA114EU/ZL115

Nexperia

SMALL SIGNAL BIPOLAR TRANSISTOR

27000

BCP54-16,135

BCP54-16,135

Nexperia

TRANS NPN 45V 1A SOT223

0

PHPT60410NY,115

PHPT60410NY,115

Nexperia

POWER BIPOLAR TRANSISTOR

0

2PC4617RMB,315

2PC4617RMB,315

Nexperia

TRANS NPN 50V 100MA DFN1006B-3

0

2PA1774RM,315

2PA1774RM,315

Nexperia

TRANS PNP 40V 100MA DFN1006-3

0

BCX52,115

BCX52,115

Nexperia

TRANS PNP 60V 1A SOT89

1

BCX56-10,135

BCX56-10,135

Nexperia

TRANS NPN 80V 1A SOT89

0

PBSS5160TVL

PBSS5160TVL

Nexperia

PBSS5160T/SOT23/TO-236AB

0

BSR14,215

BSR14,215

Nexperia

TRANS NPN 40V 800MA TO236AB

14602

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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