Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
PBSS4350Z,135

PBSS4350Z,135

Nexperia

TRANS NPN 50V 3A SOT223

9022

BC806-16HR

BC806-16HR

Nexperia

BC806-16H/SOT23/TO-236AB

2995

BCP54,135

BCP54,135

Nexperia

TRANS NPN 45V 1A SOT223

0

PBSS5360XF

PBSS5360XF

Nexperia

TRANS PNP 60V 3A SOT89

1668

PDTB143ET235

PDTB143ET235

Nexperia

0.5A, 50V, PNP, TO 236AB

0

PSMN1R4-40YLD,115-NEX

PSMN1R4-40YLD,115-NEX

Nexperia

100A, 40V, 0.00185OHM, N CHANNEL

84101

PMST4401,115

PMST4401,115

Nexperia

TRANS NPN 40V 0.6A SOT323

0

BC807-40W,135

BC807-40W,135

Nexperia

TRANS PNP 45V 0.5A SOT323

0

BC817,215

BC817,215

Nexperia

TRANS NPN 45V 500MA TO236AB

979

PMMT491A,215

PMMT491A,215

Nexperia

TRANS NPN 40V 1A TO236AB

29142

BC846W,135

BC846W,135

Nexperia

TRANS NPN 65V 0.1A SOT323

0

PZTA14,135

PZTA14,135

Nexperia

TRANS NPN DARL 30V 500MA SOT223

0

2PD602AQL,235

2PD602AQL,235

Nexperia

TRANS NPN 50V 0.5A SOT-23

0

PBSS4160U,115

PBSS4160U,115

Nexperia

TRANS NPN 60V 750MA SOT323

7136

BCX53-10,135

BCX53-10,135

Nexperia

TRANS PNP 80V 1A SOT89

0

BCX56-10TX

BCX56-10TX

Nexperia

BCX56-10T/SOT89/MPT3

890

PMBT2222AMBYL

PMBT2222AMBYL

Nexperia

PMBT2222AMB/SOT883/XQFN3

20000

PBSS2515M,315

PBSS2515M,315

Nexperia

TRANS NPN 15V 0.5A SOT883

1009

BCV26,215

BCV26,215

Nexperia

TRANS PNP DARL 30V 500MA TO236AB

1001

BC816-25HVL

BC816-25HVL

Nexperia

BC816-25H/SOT23/TO-236AB

19298

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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