Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BC807K-16VL

BC807K-16VL

Nexperia

BC807K - 45V, 500MA PNP GENERAL-

70000

BCP53-10,115

BCP53-10,115

Nexperia

TRANS PNP 80V 1A SOT223

4625

BC850CW,115

BC850CW,115

Nexperia

TRANS NPN 45V 100MA SOT323

4007

PBHV8140Z,115

PBHV8140Z,115

Nexperia

SMALL SIGNAL BIPOLAR TRANSISTOR,

139000

2PD601ARW,115

2PD601ARW,115

Nexperia

TRANS NPN 50V 0.1A SOT323

0

BCP53T,115

BCP53T,115

Nexperia

POWER BIPOLAR TRANSISTOR

6000

2PD601ARL,235

2PD601ARL,235

Nexperia

TRANS NPN 50V 0.1A SOT-23

0

BC817-25QCZ

BC817-25QCZ

Nexperia

BC817-25QC/SOT8009/DFN1412D-3

5000

BSR31,135

BSR31,135

Nexperia

TRANS PNP 60V 1A SOT89

3785

BCW66GVL

BCW66GVL

Nexperia

TRANS NPN 45V 800MA TO236AB

8466

BCV47,235

BCV47,235

Nexperia

TRANS NPN DARL 60V 0.5A SOT23

45894

BC817W,135

BC817W,135

Nexperia

NOW NEXPERIA BC817W - SMALL SIGN

120000

PZT4401,115

PZT4401,115

Nexperia

TRANS NPN 40V 0.6A SOT-223

2865

MMBT3904VL

MMBT3904VL

Nexperia

MMBT3904/SOT23/TO-236AB

0

BCP53-10TX

BCP53-10TX

Nexperia

TRANS PNP 80V 1A SOT223

0

BCV29,115

BCV29,115

Nexperia

TRANS NPN DARL 30V 0.5A SOT89

5063

PBSS304PD,115

PBSS304PD,115

Nexperia

TRANS PNP 80V 1A 6TSOP

0

PBHV8115X,115

PBHV8115X,115

Nexperia

TRANS NPN 150V 1A SOT89

790

PBSS305PX,115

PBSS305PX,115

Nexperia

TRANS PNP 80V 4A SOT89

0

BF824W,135

BF824W,135

Nexperia

TRANS PNP 30V 25MA SOT323

38536

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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