Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BC856BWE6327

BC856BWE6327

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

159000

BC817-16

BC817-16

IR (Infineon Technologies)

TRANS NPN 45V 800MA SOT23-3

233000

BCX56E6327

BCX56E6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

7010

BC858B

BC858B

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

275006

BFN39H6327XTSA1

BFN39H6327XTSA1

IR (Infineon Technologies)

TRANS PNP 300V 0.2A SOT223

0

SMBT3904E6767

SMBT3904E6767

IR (Infineon Technologies)

SWITCHING BIPOLAR TRANSISTOR

72000

BCR148WH6327

BCR148WH6327

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

15000

BSP61E6327

BSP61E6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

18000

BC847CE6327HTSA1

BC847CE6327HTSA1

IR (Infineon Technologies)

TRANS NPN 45V 100MA SOT23-3

40424

BCP5416H6327XTSA1

BCP5416H6327XTSA1

IR (Infineon Technologies)

TRANS NPN 45V 1A SOT223-4

12000

BC857BL3E6327XTMA1

BC857BL3E6327XTMA1

IR (Infineon Technologies)

TRANS PNP 45V 0.1A TSLP-3-1

0

BC847CWH6327XTSA1

BC847CWH6327XTSA1

IR (Infineon Technologies)

TRANS NPN 45V 100MA SOT323-3

99000

MMBTA42LT1HTSA1

MMBTA42LT1HTSA1

IR (Infineon Technologies)

TRANS NPN 300V 500MA SOT23-3

60000

BC857CWH6327XTSA1

BC857CWH6327XTSA1

IR (Infineon Technologies)

TRANS PNP 45V 100MA SOT323-3

24000

SMBTA14E6327HTSA1

SMBTA14E6327HTSA1

IR (Infineon Technologies)

TRANS NPN 30V 300MA SOT23-3

0

BCX52E6327

BCX52E6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

2000

BCX70HE6327

BCX70HE6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

71820

BCP54E6327

BCP54E6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

7000

BC857AE6327HTSA1

BC857AE6327HTSA1

IR (Infineon Technologies)

TRANS PNP 45V 100MA SOT23-3

8533

BCP53-10E6327

BCP53-10E6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

17000

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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